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SiGe Heterojunction Bipolar Transistors

coverage of Si and Ge bipolar transistors. Written with the practising engineer in mind, this book explains the operating principles and;

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A Box-Integration/WENO solver for the Boltzmann Transport Equation its Application to High-Speed Heterojunction Bipolar Transistors

A Box-Integration/Weno Solver for the Boltzmann Transport Equation Its Application to High-Speed Heterojunction Bipolar Transistors;

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Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors

Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication;

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Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling

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Silicon Heterostructure Devices

simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar;

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Analog Circuits

-germanium (SiGe), Heterojunction Bipolar Transistors (HBTs), and approximation in analog signal processing circuit design. The second part examines;

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Current Trends In Heterojunction Bipolar Transistors

. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic;

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Fabrication of GaAs Devices

passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors;

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Applications of Silicon-Germanium Heterostructure Devices

and the SPICE parameter extraction, and strategies for the enhancement of the high-frequency performance of heterojunction field effect;

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Fundamentals Of Iii-V Devices

basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors;

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RF and Microwave Passive and Active Technologies

systems. Updated chapters include new material on such technologies as MEMS, device packaging, surface acoustic wave (SAW) filters, bipolar;

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Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications

-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results;

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Strained Silicon Heterostructures

of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also;

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Introduction To Physical Electronics

An introduction to solid state device including field effect and bipolar transistors. Contents: 1) Conductors, Semiconductors and Diodes. 2;

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Silicon-Germanium (SiGe) Nanostructures

Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic devi;...

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Noise in Bipolar Junction Transistors at Cryogenic Temperatures.

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Noise in Bipolar Junction Transistors at Cryogenic Temperatures.

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Modeling and Characterization of Advanced Bipolar Transistors and Interconnects for Circuit Simulation

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Fabrication of SiGe HBT BiCMOS Technology

SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space;...

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Compact Hierarchical Bipolar Transistor Modeling With Hicum

Compact Hierarchical Bipolar Transistor Modeling with HiCUM will be of great practical benefit to professionals from the process;

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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 n

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and;...

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Fundamental and Applied Problems of Terahertz Devices and Technologies

, addressing the variety of topics, in particular, THz detectors based on double heterojunction bipolar transistors (DHBT) and field effect transistors;

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Analog Electronic Circuit

, bipolar junction transistors, field-effect transistors (FETs), operational amplifiers, power amplifiers, and feedback circuits. With abundant;

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Parasitic Substrate Coupling in High Voltage Integrated Circuits

leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit;

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High-Speed Semiconductor Devices

devices that includes MOSFETs, MESFETs, heterojunction FETs and permeable--base transistors, hot electron transistors, microwave diodes and;

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Basic Electronic Devices and Circuits

-conductor devices, covering diodes and bipolar transistors, opto-electronic devices, junction field-effect transistors, and MOS transistors;

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Microwave Circuit Design Using Linear and Nonlinear Techniques

of the parasitic effects on lumped elements Descriptions of active devices, including diodes, microwave transistors, heterojunction bipolar;

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