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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon;

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Strained Silicon Heterostructures

of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also;

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Antimonide-Related Strained-Layer Heterostructures

Interest in antimonide-related heterostructures is burgeoning due to their applications as light sources, diode lasers, modulators, filters;

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Silicon-Based Photonics

of principles, prospects, challenges, and technical solution paths of adding silicon-based heterostructures. The book discusses the basics;

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Semiconductor Device Physics and Design

heterostructures and strained heterostructures. The book then details the important devices ranging from p-n diodes to bipolar and field effect devices. By;

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Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices

; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and;

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Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices

; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and;

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Applications of Silicon-Germanium Heterostructure Devices

The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium;

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Molecular Beam Epitaxy

. In this edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum;

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High-Speed Heterostructure Devices

Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the;

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High-Speed Heterostructure Devices

Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the;

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Spin manipulation using semimagnetic heterostructures

Spin manipulation using semimagnetic heterostructures is een boek van Taras Slobodskyy;

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Strain-Induced Effects in Advanced MOSFETs

required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed;

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Advanced Semiconductor Heterostructures

This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety;

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Interface properties of amorphous/crystalline silicon heterojunctions

Solar cells based on monocrystalline silicon (c-Si) can potentially achieve high sunlight energy conversion efficiencies and thus could;

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Multifunctional Oxide Heterostructures

This book is devoted to the rapidly developing field of oxide thin-films and heterostructures. Oxide materials combined with atomic-scale;

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Long Wave Polar Modes in Semiconductor Heterostructures

Long Wave Polar Modes in Semiconductor Heterostructures is concerned with the study of polar optical modes in semiconductor;

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Lithium Niobate-Based Heterostructures

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2D Materials and Van der Waals Heterostructures

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Lithium Niobate-Based Heterostructures

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Fundamentals of Modern VLSI Devices

dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS;

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Quantum Heterostructures

Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor;

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Quantum Heterostructures

Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor;

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Integrated Multiferroic Heterostructures and Applications

Written by well-known experts in the field, this first systematic overview of multiferroic heterostructures summarizes the latest;

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Epitaxy of Semiconductors

of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the;

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Transistor Scaling

technology generation, strained silicon has emerged as one such innovation. Other device structures such as multigate FETs may be introduced to meet;

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2D Nanoscale Heterostructured Materials

-end technological applications. The book offers an overview of the different synthesis techniques for 2D materials and their heterostructures;

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