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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon;

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Silicon Heterostructure Devices

SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the;

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Applications of Silicon-Germanium Heterostructure Devices

The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium;

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Silicon-Germanium (SiGe) Nanostructures

Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for;

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Fabrication of SiGe HBT BiCMOS Technology

in the communications electronics market either has SiGe up and running in-house or is using someone else's SiGe fab as foundry for their;

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Circuits and Applications Using Silicon Heterostructure Devices

No matter how you slice it, semiconductor devices power the communications revolution. Skeptical? Imagine for a moment that you could flip;

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Measurement and Modeling of Silicon Heterostructure Devices

focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the;

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Strained Silicon Heterostructures

This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices;

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SiGe Heterojunction Bipolar Transistors

enabling devices in a wide range of products for wireless and wired communications.This book: features SiGe products which include chip sets for;

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Silicon-Based Photonics

SOI-based waveguide configurations and Ge- and GeSn-Si heterostructure devices for light detection, modulation, and light emission and lasing;

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Stress and Strain Engineering at Nanoscale in Semiconductor Devices

design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the;

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Epitaxy of Semiconductors

top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics;

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MRS Proceedings Doping Engineering for Front-End Processing

related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices;

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Doping Engineering for Front-End Processing

related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices;

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Molecular Beam Epitaxy

dots and in-growth control of the MBE crystallization process of strained-layer structures.;

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High-Speed Heterostructure Devices

devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as;

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High-Speed Heterostructure Devices

devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as;

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Epitaxy of Semiconductors

of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase;

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Epitaxy of Semiconductors

of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase;

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3D and Circuit Integration of MEMS

systematic exploration of the technologies for microsystem packaging and heterogeneous integration. The book focuses on the silicon MEMS that have;

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Strain-Engineered MOSFETs

of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering;

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Strain-Engineered MOSFETs

of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering;

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Novel Silicon Based Technologies

, technology and devices for silicon based three-dimensional circuits, integrated fabrication of micromechanical structures on silicon, micromachining;

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Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices

Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial;

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Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices

Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial;

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Fundamentals of Nanoscaled Field Effect Transistors

, are fully explored. The solutions to these issues, such as high- technology, strained-Si technology, alternate devices structures and;

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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 n

epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the;

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