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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 n

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and;

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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon;

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Silicon-Germanium (SiGe) Nanostructures

Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for;

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Scaling and Integration of High-Speed Electronics and Optomechanical Systems

associated with sourcedrain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for;

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SiGe-based Re-engineering of Electronic Warfare Subsystems

for electronic warfare and defensive countermeasures in military contexts. It explains in detail the theoretical and technical background, and;

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Epitaxy of Semiconductors

The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the;

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Epitaxy of Semiconductors

The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the;

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Gan and Related Alloys 1999

in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.;

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Epitaxy of Semiconductors

liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states;

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SiGe Heterojunction Bipolar Transistors

enabling devices in a wide range of products for wireless and wired communications.This book: features SiGe products which include chip sets for;

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Handbook for III-V High Electron Mobility Transistor Technologies

information about sourcedrain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance;

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Silicon Germanium

of IBM's SiGe technologies Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal;

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Tradeoffs and Optimization in Analog CMOS Design

circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current;

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Molecular Beam Epitaxy

Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines;

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New Techniques on Soft Soils

New Techniques on Soft Soils covers a wide range of updated techniques related to site investigation, vertical drains, surcharge, piled;

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New Techniques on Soft Soils

Techniques on Soft Soils covers a wide range of updated techniques on several topics, such as site investigation, vertical drains, surcharge, piled;

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Fabrication of SiGe HBT BiCMOS Technology

in the communications electronics market either has SiGe up and running in-house or is using someone else's SiGe fab as foundry for their;

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Strained Silicon Heterostructures

This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices;

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CMOS Nanoelectronics

topics such as high-density fin patterning, gate stack design, and sourcedrain engineering, which have been considered challenges for the;

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Applied Laser Spectroscopy for Nuclear Physics

radioactive ion beam production. It also presents the methods and results of an investigation into isotope shifts in the mercury isotopic chain. These;

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Advances in Computer Science for Engineering and Education III

and Education Applications (ICCSEEA2020), held in Kyiv, Ukraine, on 21-22 January 2020, organized jointly by National Technical University;

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Control Engineering and Information Systems

Control Engineering and Information Systems contains the papers presented at the 2014 International Conference on Control Engineering and;

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Indian Diaspora in the United States

Indian Diaspora in the United States takes a new perspective on the topic of brain drain, departing from the traditional literature to;

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MRS Proceedings Doping Engineering for Front-End Processing

models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects;

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Doping Engineering for Front-End Processing

models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects;

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Stress and Strain Engineering at Nanoscale in Semiconductor Devices

design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the;

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Silicon Heterostructure Devices

, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability;

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