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Fabrication of SiGe HBT BiCMOS Technology

SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player;

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Performance prediction of a future SiGe HBT technology using a heterogeneous set of simulation tools and approaches

Performance Prediction of a Future Sige Hbt Technology Using a Heterogeneous Set of Simulation Tools and Approaches is een boek van Tommy;

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Silicon Germanium

An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. -Ron Wilson, EETimes;

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Applications of Silicon-Germanium Heterostructure Devices

aspects of the book include key technology issues for the growth of strained layers, background theory of the HBT, how device simulation can be;

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Scaling and Integration of High-Speed Electronics and Optomechanical Systems

technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche;

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On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits

This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT;

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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

-control relations, and sample SiGe HBT compact model parameters.;

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Silicon Heterostructure Devices

of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.;

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RF Technologies for Low Power Wireless Communications

coverage of:* Advanced GaAs-based HBT designs* InP-based devices and circuits* Si/SiGe HBT technology* Noise in GaN devices* Power amplifier;

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The VLSI Handbook

circuits High-speed circuit design principles SiGe HBT technology Bipolar junction transistor amplifiers Performance modeling and analysis;

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Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors

Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication;

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SiGe-based Re-engineering of Electronic Warfare Subsystems

addresses all aspects of the integration of SiGe as an enabling technology for maritime, land, and airborne / spaceborne electronic warfare;

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SiGe Heterojunction Bipolar Transistors

wireless cellular handsets as well as WLAN and high-speed wired network applications; and describes the physics and technology of SiGe HBTs, with;

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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 n

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and;

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Esd

BiCMOS Silicon Germanium (SiGe), RF BiCMOS Silicon Germanium Carbon (SiGeC), and Gallim Arsenide technology; * gives information on RF ESD;

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Current Trends In Heterojunction Bipolar Transistors

, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development;

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High Frequency Integrated Circuits

systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave and optical fiber circuits using nanoscale CMOS, SiGe BiCMOS;

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Measurement and Modeling of Silicon Heterostructure Devices

integral charge-control model, and sample SiGe HBT compact model parameters.;

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Silicon-Germanium (SiGe) Nanostructures

Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic devi;...

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Esd Physics And Devices

covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium;

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3D and Circuit Integration of MEMS

of microsystems MEMS and system integration are important building blocks for the More-Than-Moore paradigm described in the International Technology;

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The Prophecy (Voluspa)

This work contains coverage of an area in circuit design for VLSI: low-voltage, minimum power circuits within a BiCMOS environment. BiCMOS;

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MRS Proceedings Doping Engineering for Front-End Processing

related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices;

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Doping Engineering for Front-End Processing

related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices;

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Integrierte Digitale Schaltungen Mos / BICMOS

Die Verwendung von Zellbibliotheken zur Synthese von Logikbausteinen ohne Verstandnis der integrierten Schaltungstechniken MOSBICMOS fuhrt;

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Strain-Engineered MOSFETs

of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering;

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Strain-Engineered MOSFETs

of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering;

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