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Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors

Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication;

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Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices

; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and;

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Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices

; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and;

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SiGe Heterojunction Bipolar Transistors

silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the;

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Current Trends In Heterojunction Bipolar Transistors

. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic;

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Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications

-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results;

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Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling

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Analog Circuits

-germanium (SiGe), Heterojunction Bipolar Transistors (HBTs), and approximation in analog signal processing circuit design. The second part examines;

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A Box-Integration/WENO solver for the Boltzmann Transport Equation its Application to High-Speed Heterojunction Bipolar Transistors

A Box-Integration/Weno Solver for the Boltzmann Transport Equation Its Application to High-Speed Heterojunction Bipolar Transistors;

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Applications of Silicon-Germanium Heterostructure Devices

The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium;

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Modeling and Characterization of Advanced Bipolar Transistors and Interconnects for Circuit Simulation

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Silicon Heterostructure Devices

simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar;

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Strained Silicon Heterostructures

of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also;

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Compact Hierarchical Bipolar Transistor Modeling With Hicum

Compact Hierarchical Bipolar Transistor Modeling with HiCUM will be of great practical benefit to professionals from the process;

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Germanium

in Ge-doped silica; Germanium encaged fullerene-synthesis; research of silicon and germanium structures with films of oxides and fluoride rare earth;

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Silicon, Germanium, and Their Alloys

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view;

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Silicon Heterojunction Solar Cells

"Silicon heterojunction solar cells----Understanding and optimization of a-Si PECVD deposition" is a summary of author's research work on;

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Devices for Integrated Circuits

A detailed, modern introduction to semiconductors made in silicon and III-V compounds. This book develops the device physics of pn;

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Advanced Nanoelectronics

the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials;

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Fabrication of GaAs Devices

passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors;

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Silicon-Germanium (SiGe) Nanostructures

Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for;

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Photonics and Electronics with Germanium

structures, which determine the performance of germanium-based devices in conjunction with conventional silicon technology. The second part covers;

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Silicon Germanium

. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning;

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Silicon Germanium Materials and Devices - A Market and Technology Overview to 2006

The first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the;

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Esd Physics And Devices

requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium;

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Fundamentals Of Iii-V Devices

basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors;

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Measurement and Modeling of Silicon Heterostructure Devices

includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the;

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