physics based compact modeling and parameter extraction for inp heterojunction bipolar transistors with special emphasis on material specific physical effects and geometry scaling online kopen

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Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling

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Current Trends In Heterojunction Bipolar Transistors

device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog;

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Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors

resistance as well as a proper partitioning of the substrate capacitance. New extraction methods for compact model parameters are introduced and the;

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Bsim4 And Mosfet Modeling For Ic Simulation

attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested;

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Reduced Order Methods for Modeling and Computational Reduction

systems, governed by ordinary and/or partial differential equations, with a special emphasis on real time computing techniques and applications;

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Silicon Heterostructure Devices

simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar;

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Compact Hierarchical Bipolar Transistor Modeling With Hicum

classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device;

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Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications

of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the;

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Compact Models for Integrated Circuit Design

Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit;

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Compact Models for Integrated Circuit Design

Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit;

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A Box-Integration/WENO solver for the Boltzmann Transport Equation its Application to High-Speed Heterojunction Bipolar Transistors

A Box-Integration/Weno Solver for the Boltzmann Transport Equation Its Application to High-Speed Heterojunction Bipolar Transistors;

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Fundamentals Of Iii-V Devices

-of-chapter practice problems Appendices listing parameters for various materials and transistor types;

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Fabrication of GaAs Devices

passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors;

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Nanoelectronic devices in InGaAs/InP

being investigated. With this background, the present book focuses on nanoelectronic devices in InGaAsInP based on ballistic and quantum;

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Applications of Silicon-Germanium Heterostructure Devices

and the SPICE parameter extraction, and strategies for the enhancement of the high-frequency performance of heterojunction field effect;

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SiGe Heterojunction Bipolar Transistors

coverage of Si and Ge bipolar transistors. Written with the practising engineer in mind, this book explains the operating principles and;

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Computational Electronics

Computational Electronics is devoted to state of the art numerical techniques and physical models used in the simulation of semiconductor;

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Springer Handbook of Semiconductor Devices

, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities;

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High Frequency Interconnect Characterization and Modeling

of IC packages impose limits on the circuit performance at RF frequencies. This book presents modeling of on-chip inductance for chips with;

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III-V Integrated Circuit Fabrication Technology

current state of the art of IIIV processing with emphasis on heterojunction bipolar transistors, the volume leader technology, having grown due to;

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Devices for Integrated Circuits

statistical mechanics are used to describe electrons and holes in semiconductors. Figures and examples based on realistic device parameters are used;

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Junctionless FieldEffect Transistors

for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use;

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Nanoscale Silicon Devices

in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the;

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Nanoscale Silicon Devices

in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the;

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Industry Standard FDSOI Compact Model BSIM-IMG for IC Design

authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG;

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Field Effect Transistors Comprehensive

* Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author * Contains;

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Optical and EUV Lithography

-Nuremberg and in preparation for dedicated courses on special aspects of lithography. The book is intended to introduce interested students with;

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