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. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic;
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A Box-Integration/Weno Solver for the Boltzmann Transport Equation Its Application to High-Speed Heterojunction Bipolar Transistors;
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Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication;
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passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors;
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coverage of Si and Ge bipolar transistors. Written with the practising engineer in mind, this book explains the operating principles and;
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-germanium (SiGe), Heterojunction Bipolar Transistors (HBTs), and approximation in analog signal processing circuit design. The second part examines;
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systems. Updated chapters include new material on such technologies as MEMS, device packaging, surface acoustic wave (SAW) filters, bipolar;
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basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors;
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-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results;
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of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also;
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An introduction to solid state device including field effect and bipolar transistors. Contents: 1) Conductors, Semiconductors and Diodes. 2;
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, high current switching devices besides sensitive control, protection and signal processing circuits. The injection of parasitic charges;
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Compact Hierarchical Bipolar Transistor Modeling with HiCUM will be of great practical benefit to professionals from the process;
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, addressing the variety of topics, in particular, THz detectors based on double heterojunction bipolar transistors (DHBT) and field effect transistors;
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, bipolar junction transistors, field-effect transistors (FETs), operational amplifiers, power amplifiers, and feedback circuits. With abundant;
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dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards;
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flux and constant current operation of induction motors. Additional material is included on new solid state devices such as Insulated Gate;
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current state of the art of IIIV processing with emphasis on heterojunction bipolar transistors, the volume leader technology, having grown due to;
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to LDMOS high power RF transistors has been added to the new edition. A comparison is given between LDMOS FETs, TMOS FETs and bipolar;
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simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar;
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devices that includes MOSFETs, MESFETs, heterojunction FETs and permeable--base transistors, hot electron transistors, microwave diodes and;
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LDMOS high power RF transistors has been added to the new edition. A comparison is given between LDMOS FETs, TMOS FETs and bipolar transistors;
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power measurements, frequency response measurements, power spectrum measurements, current versus voltage characteristic measurements of diodes;
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