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Current Trends In Heterojunction Bipolar Transistors

. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic;

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A Box-Integration/WENO solver for the Boltzmann Transport Equation its Application to High-Speed Heterojunction Bipolar Transistors

A Box-Integration/Weno Solver for the Boltzmann Transport Equation Its Application to High-Speed Heterojunction Bipolar Transistors;

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Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling

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Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors

Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication;

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Fabrication of GaAs Devices

passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors;

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SiGe Heterojunction Bipolar Transistors

coverage of Si and Ge bipolar transistors. Written with the practising engineer in mind, this book explains the operating principles and;

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Analog Circuits

-germanium (SiGe), Heterojunction Bipolar Transistors (HBTs), and approximation in analog signal processing circuit design. The second part examines;

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RF and Microwave Passive and Active Technologies

systems. Updated chapters include new material on such technologies as MEMS, device packaging, surface acoustic wave (SAW) filters, bipolar;

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Fundamentals Of Iii-V Devices

basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors;

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Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications

-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results;

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Strained Silicon Heterostructures

of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also;

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Introduction To Physical Electronics

An introduction to solid state device including field effect and bipolar transistors. Contents: 1) Conductors, Semiconductors and Diodes. 2;

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Noise in Bipolar Junction Transistors at Cryogenic Temperatures.

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Noise in Bipolar Junction Transistors at Cryogenic Temperatures.

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Parasitic Substrate Coupling in High Voltage Integrated Circuits

, high current switching devices besides sensitive control, protection and signal processing circuits. The injection of parasitic charges;

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Modeling and Characterization of Advanced Bipolar Transistors and Interconnects for Circuit Simulation

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Compact Hierarchical Bipolar Transistor Modeling With Hicum

Compact Hierarchical Bipolar Transistor Modeling with HiCUM will be of great practical benefit to professionals from the process;

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Fundamental and Applied Problems of Terahertz Devices and Technologies

, addressing the variety of topics, in particular, THz detectors based on double heterojunction bipolar transistors (DHBT) and field effect transistors;

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Analog Electronic Circuit

, bipolar junction transistors, field-effect transistors (FETs), operational amplifiers, power amplifiers, and feedback circuits. With abundant;

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Field Effect Transistors Comprehensive

dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards;

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Principles Of Electric Machines And Power Electronics

flux and constant current operation of induction motors. Additional material is included on new solid state devices such as Insulated Gate;

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III-V Integrated Circuit Fabrication Technology

current state of the art of IIIV processing with emphasis on heterojunction bipolar transistors, the volume leader technology, having grown due to;

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Radio Frequency Transistors

to LDMOS high power RF transistors has been added to the new edition. A comparison is given between LDMOS FETs, TMOS FETs and bipolar;

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Silicon Heterostructure Devices

simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar;

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High-Speed Semiconductor Devices

devices that includes MOSFETs, MESFETs, heterojunction FETs and permeable--base transistors, hot electron transistors, microwave diodes and;

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Radio Frequency Transistors

LDMOS high power RF transistors has been added to the new edition. A comparison is given between LDMOS FETs, TMOS FETs and bipolar transistors;

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Circuits and Electronics

power measurements, frequency response measurements, power spectrum measurements, current versus voltage characteristic measurements of diodes;

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