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SiGe Heterojunction Bipolar Transistors

SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating;

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Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors

Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication;

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Current Trends In Heterojunction Bipolar Transistors

. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic;

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Carrier Transport in Nanoscale MOS Transistors

transport * Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent;

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Fundamentals Of Iii-V Devices

basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors;

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Deterministic Solvers for the Boltzmann Transport Equation

The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where;

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Understanding Modern Transistors And Diodes

Boltzmann Transport Equation * Covers MOSFETS, HBTs and HJFETS * Uses the PSP model for MOSFETS * Rigorous treatment of device capacitance;

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High-Speed Semiconductor Devices

Introduces the physical principles and operational characteristics of high speed semiconductor devices. Intended for use by advanced;

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Semiconductor Devices for High-Speed Optoelectronics

also describes recent advances in high-speed devices for 40 Gbps systems. Introductory elements are provided, making the book open to readers;

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RF and Microwave Passive and Active Technologies

junction and heterojunction transistors, and high mobility electron transistors (HMETs). The book also features a completely rewritten section on;

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Analog Circuits

of current-feedback operational amplifiers and their applications to chaos-based secure communications, and application of amplifiers for the;

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Computational Methods For Electromagnetic Phenomena

optical waveguides * NEGF(Non-equilibrium Green's function) and Wigner kinetic methods for quantum transport * High-order WENO and Godunov and;

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Fabrication of GaAs Devices

passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors;

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Strained Silicon Heterostructures

of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also;

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Multiscale and Multiphysics Flow Simulations of Using the Boltzmann Equation

, to Darcy scale. The author presents various numerical algorithms to solve the same Boltzmann-like equation for different applications;

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Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications

-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results;

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Applications of Silicon-Germanium Heterostructure Devices

used to predict the optimum HBT device structure for a particular application such as cryogenics, compact SiGe-HBT models for RF applications;

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Compact Hierarchical Bipolar Transistor Modeling With Hicum

designs. This book aims to provide a solid basis for the understanding of modern compact models.;

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Parasitic Substrate Coupling in High Voltage Integrated Circuits

leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit;

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New Design Concepts for High Speed Air Transport

This book presents the challenges, the tools and the concepts for developing economically viable high speed civil transport aircraft under;

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Lattice Gas Methods

the lattice Boltzmann equation, a new direction in lattice gas research that considerably reduces fluctuations.The twenty-seven contributions;

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Advanced Physics of Electron Transport in Semiconductors and Nanostructures

formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the;

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High-Speed Rail in Poland

Railways (PKP). At present, it serves as an independent entity, it is subordinated to the minister responsible for transport. Since its inception;

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High-Speed Rail in Poland

Railways (PKP). At present, it serves as an independent entity, it is subordinated to the minister responsible for transport. Since its inception;

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An Introduction to Theory of the BO

modern theory of Boltzmanns equation, including representative applications using both Boltzmanns equation and the model Boltzmann equations;

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