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Carrier Transport in Nanoscale MOS Transistors

progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations * The authors approach the subject in a;

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Nanoscale Mos Transistors

future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples;

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Technology CAD - Computer Simulation of IC Processes and Devices

-Equilibrium .......... . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction;

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Nanoelectronics

nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as;

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Physics of Semiconductor Devices 4e

parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration;

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Semiconductor Device And Failure Analysis

emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors;

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Near-equilibrium Transport

These lectures are designed to introduce students to the fundamentals of carrier transport in nano-devices using a novel, bottom up;

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Near-equilibrium Transport

These lectures are designed to introduce students to the fundamentals of carrier transport in nano-devices using a novel, bottom up;

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Compact Models for Integrated Circuit Design

-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses;

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Compact Models for Integrated Circuit Design

), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical;

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Thermal Energy At The Nanoscale

structures. Thermal energy in two carriers, i.e. phonons and electrons are explored from first principles. For solid-state transport, a common;

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Thermal Energy At The Nanoscale

structures. Thermal energy in two carriers, i.e. phonons and electrons - are explored from first principles. For solid-state transport, a common;

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Fundamentals of Nanoscaled Field Effect Transistors

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental ;...

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Devices for Integrated Circuits

junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs). Basic concepts from quantum and;

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Frontiers In Electronics

This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate;

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Nanoelectronic Devices

basics of electron transport and p-n junctions, develops the operations of MOS capacitors and MOSFETs and introduces some basic CMOS circuits;

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Integrierte MOS-Schaltungen

Innerhalb von etwa 20 Jahren seit dem Erscheinen der erst en integrier- ten Schaltungen auf dem Markt erreicht die MOS-Technik heute den;

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The Physics and Modeling of Mosfets

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3;

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Physics And Modeling Of Mosfets, The

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3;

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Proceedings of the ASME 2016 5th International Conference on Micro/Nanoscale Heat and Mass Transfer (MNHMT2016)

in Micro/Nanoscale Transport; Heat and Mass Transfer in Small Scale; Micro/Miniature Multi-Phase Devices; Biomedical Applications of Micro;

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Hot-Carrier Effects in MOS Devices

carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself;

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Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET)

With recent advancements in electronics, specifically nanoscale devices, new technologies are being ;...

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A Box-Integration/WENO solver for the Boltzmann Transport Equation its Application to High-Speed Heterojunction Bipolar Transistors

A Box-Integration/Weno Solver for the Boltzmann Transport Equation Its Application to High-Speed Heterojunction Bipolar Transistors;

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Neuromorphic Circuits for Nanoscale Devices

Nanoscale devices attracted significant research effort from the industry and academia due to their ;...

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Simulation of Transport in Nanodevices

in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision;

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Transport Phenomena in Micro- and Nanoscale Functional Materials and Devices

Transport Phenomena in Micro- and Nanoscale Functional Materials and Devices offers a pragmatic view on transport phenomena for micro;

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Low Power And Low Voltage Circuit Design With the FGMOS Transistor

understanding of the latest low voltage and low power (LV/LP) techniques, one of the most promising of which makes use of the floating gate MOS (FGMOS;

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