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driven the modern smart-device revolution-many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass;
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required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed;
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techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and;
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techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and;
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A detailed, modern introduction to semiconductors made in silicon and III-V compounds. This book develops the device physics of pn;
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physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This;
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This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with;
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technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging;
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and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features;
Vergelijkbare producten zoals The Physics and Modeling of Mosfets
and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features;
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and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical;
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of 0.18um MOSFETs have been studied and discussed in terms of sub-threshold characteristics, threshold-voltage, the effect of the body bias and;
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The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling;
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the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances;
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the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances;
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devices based on those of microelectronic devices wherever possible and introduce the inherently nanoelectronic principles gradually. They start a;
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Nanowire Field Effect Transistor: Basic Principles and Applications places an emphasis on the application aspects of nanowire field effect;
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Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the;
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Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the;
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Low Voltage Power MOSFETs focuses on the design of low voltage power MOSFETs and the relation between the device structure and the;
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Contact resistance is both an old and new topic. It is old because fundamentals of the semiconductor-metal contacts were established in the;
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book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological;
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Physics and Modeling of Tera- and Nano-Devices is a compilation of papers by well-respected researchers working in the field of physics and;
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level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics;
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MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET;
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MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET;
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of bringing together the structural domain of mathematics and the content of physics in one coherent inquiry. Teaching and learning physics;
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