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Fundamentals of Bias Temperature Instability in MOS Transistors

This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS;

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Modeling and Simulation of Negative Bias Temperature Instability

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Reliability of high-k / metal gate field-effect transistors considering circuit operational constraints

device operating conditions. The strongest deterioration of the gate stack was found for nMOS devices under positive bias temperature instability;

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Charge-Based Mos Transistor Modeling

Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their;

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Semiconductor Process Reliability in Practice

-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB) Negative bias temperature instability Plasma-induced damage Electrostatic;

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Carrier Transport in Nanoscale MOS Transistors

progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations * The authors approach the subject in a;

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Devices for Integrated Circuits

junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs). Basic concepts from quantum and;

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Technology CAD - Computer Simulation of IC Processes and Devices

Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model;

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Nanoscale Mos Transistors

future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples;

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Nanoelectronic Devices

basics of electron transport and p-n junctions, develops the operations of MOS capacitors and MOSFETs and introduces some basic CMOS circuits;

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The Physics and Modeling of Mosfets

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3;

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Physics And Modeling Of Mosfets, The

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3;

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Integrierte MOS-Schaltungen

Innerhalb von etwa 20 Jahren seit dem Erscheinen der erst en integrier- ten Schaltungen auf dem Markt erreicht die MOS-Technik heute den;

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To the Digital Age

The metal-oxide-semiconductor (MOS) transistor is the fundamental element of digital electronics. The tens of millions of transistors in a;

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Low Power And Low Voltage Circuit Design With the FGMOS Transistor

understanding of the latest low voltage and low power (LV/LP) techniques, one of the most promising of which makes use of the floating gate MOS (FGMOS;

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Fundamentals of Nanoscaled Field Effect Transistors

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental ;...

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Compact Models for Integrated Circuit Design

-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses;

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Compact Models for Integrated Circuit Design

), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical;

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Physics of Semiconductor Devices 4e

-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors;

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Nanoelectronics

nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as;

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Mosfet Modeling For Vlsi Simulation

and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact;

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Semiconductor Devices Explained

involved and covers semiconductor physics, junction diodes, silicon bipolar and MOS transistors and photonic devices like LEDs and lasers;

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Technology Computer Aided Design

simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents;

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Technology Computer Aided Design

simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents;

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Principles Of Electric Machines And Power Electronics

Bipolar Transistors and MOS-Controlled Thyristors.;

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Handbook for III-V High Electron Mobility Transistor Technologies

of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key;

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Fundamentals of Microelectronics With Robotics and Bioengineering Applications, 3rd Edition

, including design problems that challenge students to select the bias and component values to satisfy particular requirements. The text contains a;

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