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charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device;
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Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third;
Vergelijkbare producten zoals Operation and Modeling of the MOS Transistor, Third Edtion International Edition
and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact;
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This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3;
Vergelijkbare producten zoals The Physics and Modeling of Mosfets
This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3;
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Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1;
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The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling;
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Text provides information about advanced OTFT (Organic thin film transistor) structures, their modeling and extraction of performance;
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Text provides information about advanced OTFT (Organic thin film transistor) structures, their modeling and extraction of performance;
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The metal-oxide-semiconductor (MOS) transistor is the fundamental element of digital electronics. The tens of millions of transistors in a;
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and power-efficient analog building blocks. Explores design methods based on various MOS transistor models (MOSFET, FinFET;
Vergelijkbare producten zoals Amplifiers, Comparators, Multipliers, Filters, and Oscillators
of high-speed and power-efficient analog building blocks. Explores design methods based on various MOS transistor models (MOSFET;
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) transistor. Whilst a conventional MOS transistor has only one input, the FGMOS transistors often have several. This fact, along;
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of MOS and bipolar physics.* Covers IGBT operation, device and process design, power modules, and new IGBT structures.;
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, including a brief historical note of Moore's law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the;
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challenges in measuring and improving the control of future MOS systems for transistor channels. Building up from basic electrostatics, it introduces;
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Compact Hierarchical Bipolar Transistor Modeling with HiCUM will be of great practical benefit to professionals from the process;
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junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs). Basic concepts from quantum and;
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of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key;
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simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents;
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simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents;
Vergelijkbare producten zoals Technology Computer Aided Design
This text discusses simulation process for circuits including clamper, voltage and current divider, transformer modeling, transistor as an;
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electronic engineering students can turn to Basics of CMOS Cell Design for a practice-based introduction to the design and simulation of every major;
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design. Unlike any other book in this field, transistor-level implementations are also included, which allow the readers to gain a solid;
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The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated;
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future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples;
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