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progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations * The authors approach the subject in a;
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future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples;
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nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as;
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-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses;
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), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical;
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Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental ;...
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junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs). Basic concepts from quantum and;
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Innerhalb von etwa 20 Jahren seit dem Erscheinen der erst en integrier- ten Schaltungen auf dem Markt erreicht die MOS-Technik heute den;
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This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3;
Vergelijkbare producten zoals The Physics and Modeling of Mosfets
This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3;
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With recent advancements in electronics, specifically nanoscale devices, new technologies are being ;...
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Nanoscale devices attracted significant research effort from the industry and academia due to their ;...
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understanding of the latest low voltage and low power (LV/LP) techniques, one of the most promising of which makes use of the floating gate MOS (FGMOS;
Vergelijkbare producten zoals Low Power And Low Voltage Circuit Design With the FGMOS Transistor
The metal-oxide-semiconductor (MOS) transistor is the fundamental element of digital electronics. The tens of millions of transistors in a;
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From materials science to integrated circuit development, much of modern technology is moving from t;...
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Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their;
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-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors;
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and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact;
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The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed c;...
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The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed c;...
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Understand the theory, design and applications of the two principal candidates for the next mainstre;...
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simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents;
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simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents;
Vergelijkbare producten zoals Technology Computer Aided Design
of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key;
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Bipolar Transistors and MOS-Controlled Thyristors.;
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Tremendous innovations in electronics and photonics over the past few decades have resulted in the d;...
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Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1;
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