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Insulated Gate Bipolar Transistor Igbt Theory And Design

of MOS and bipolar physics.* Covers IGBT operation, device and process design, power modules, and new IGBT structures.;

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The IGBT Device

The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor, Second Edition provides the essential;

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Self-Commutating Converters for High Power Applications

Bipolar Transistor (IGBT) and Integrated Gate-Commutated Thyristor (IGCT), are reaching levels that make the technology possible for very high;

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Compact Hierarchical Bipolar Transistor Modeling With Hicum

development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs;

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The IGBT Device

unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design;

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Electronics Engineering

transistor (BJT), field effect transistor (FET), operational amplifier (Op-Amp), switching theory and logic design (STLD), and electronics;

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SOI Lubistors

level. Contents includes: Concept of Ideal pn Junction/Proposal of Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistor (Lubistor;

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Principles Of Electric Machines And Power Electronics

Bipolar Transistors and MOS-Controlled Thyristors.;

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Fundamentals of Modern VLSI Devices

A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom;

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CMOS Nanoelectronics

. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the;

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Fundamentals of RF and Microwave Transistor Amplifiers

include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice;

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Organic Thin-Film Transistor Applications

Text provides information about advanced OTFT (Organic thin film transistor) structures, their modeling and extraction of performance;

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Organic Thin-Film Transistor Applications

Text provides information about advanced OTFT (Organic thin film transistor) structures, their modeling and extraction of performance;

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Electronic Circuit Design and Application

first provide a foundation in the theory and operation of basic electronic devices, including the diode, bipolar junction transistor, field;

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Basic Electronics

techniques for bipolar junction transistors, used in designing amplifiers. The textbook discusses design construction and operation principle for;

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Electronics for Embedded Systems

issues encountered while designing embedded system hardware. It is written for students and young professionals who have basic circuit theory;

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Electronics for Embedded Systems

issues encountered while designing embedded system hardware. It is written for students and young professionals who have basic circuit theory;

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Integrated Power Devices and TCAD Simulation

-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction;

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Integrated Power Devices and TCAD Simulation

-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction;

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Highly Integrated Gate Drivers for Si and GaN Power Transistors

efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers;

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Highly Integrated Gate Drivers for Si and GaN Power Transistors

efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers;

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Low-Power VLSI Circuits and Systems

transistor, gate and circuit level; followed by various low-power design methodologies, such as supply voltage scaling, switched capacitance;

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Power Microelectronics

semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the;

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Transistor Scaling

industry to date. However, as the transistor gate lengths drop below 35nm and the gate oxide thickness is reduced to 1nm, physical limitations such;

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Gain Cell Embedded DRAMs for Low Power VLSI Systems on Chip

measurements, which is key for low-power GC-eDRAM design. The book then investigates supply voltage scaling and near-threshold voltage (NTV) operation;

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MicroCMOS Design

design, coverage starts with abstract concepts-including discussion of bipolar junction transistors (BJTs) and MOS transistors-and builds up to;

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MicroCMOS Design

design, coverage starts with abstract concepts-including discussion of bipolar junction transistors (BJTs) and MOS transistors-and builds up to;

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