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of MOS and bipolar physics.* Covers IGBT operation, device and process design, power modules, and new IGBT structures.;
Vergelijkbare producten zoals Insulated Gate Bipolar Transistor Igbt Theory And Design
The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor, Second Edition provides the essential;
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Bipolar Transistor (IGBT) and Integrated Gate-Commutated Thyristor (IGCT), are reaching levels that make the technology possible for very high;
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development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs;
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unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design;
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transistor (BJT), field effect transistor (FET), operational amplifier (Op-Amp), switching theory and logic design (STLD), and electronics;
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level. Contents includes: Concept of Ideal pn Junction/Proposal of Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistor (Lubistor;
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Bipolar Transistors and MOS-Controlled Thyristors.;
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A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom;
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. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the;
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include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice;
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Text provides information about advanced OTFT (Organic thin film transistor) structures, their modeling and extraction of performance;
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Text provides information about advanced OTFT (Organic thin film transistor) structures, their modeling and extraction of performance;
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first provide a foundation in the theory and operation of basic electronic devices, including the diode, bipolar junction transistor, field;
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techniques for bipolar junction transistors, used in designing amplifiers. The textbook discusses design construction and operation principle for;
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issues encountered while designing embedded system hardware. It is written for students and young professionals who have basic circuit theory;
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issues encountered while designing embedded system hardware. It is written for students and young professionals who have basic circuit theory;
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-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction;
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-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction;
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efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers;
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efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers;
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transistor, gate and circuit level; followed by various low-power design methodologies, such as supply voltage scaling, switched capacitance;
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semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the;
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industry to date. However, as the transistor gate lengths drop below 35nm and the gate oxide thickness is reduced to 1nm, physical limitations such;
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measurements, which is key for low-power GC-eDRAM design. The book then investigates supply voltage scaling and near-threshold voltage (NTV) operation;
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design, coverage starts with abstract concepts-including discussion of bipolar junction transistors (BJTs) and MOS transistors-and builds up to;
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design, coverage starts with abstract concepts-including discussion of bipolar junction transistors (BJTs) and MOS transistors-and builds up to;
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