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Highly Integrated Gate Drivers for Si and GaN Power Transistors

efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers;

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Highly Integrated Gate Drivers for Si and GaN Power Transistors

efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers;

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GaN-Based Tri-Gate High Electron Mobility Transistors.

-state figures of merit. The demonstrated results promote the great potential of Tri-gate GaN HEMTs for both MMW power amplifier and high-speed;

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Integrated Power Devices and TCAD Simulation

virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and;

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Integrated Power Devices and TCAD Simulation

virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and;

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Power GaN Devices

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with;

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Handbook for III-V High Electron Mobility Transistor Technologies

followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaNGaN HEMTs. The book also provides;

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Modern Power Electronic Devices

-driving methods for robustness and reliability. A chapter outlining the prospects and outlooks in power electronics technology and its market;

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Gallium Nitride Gan

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;

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Gallium Nitride (GaN)

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;

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Gallium Nitride And Silicon Carbide Power Devices

industry and as a textbook for a power device or power electronics course in universities.Request Inspection Copy

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Capacitors

of capacitors into integrated circuits; and the impact of capacitor energization over the power quality of the MV distribution grid.;

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III-V Compound Semiconductors

present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a;

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III-V Compound Semiconductors

present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a;

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Nano-CMOS Gate Dielectric Engineering

covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, Nano-CMOS Gate Dielectric Engineering;

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Fundamentals of Bias Temperature Instability in MOS Transistors

physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This;

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Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors

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Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors

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CMOS Gate-Stack Scaling Materials, Interfaces and Reliability Implications

formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability;

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CMOS Gate-Stack Scaling Materials, Interfaces and Reliability Implications

formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability;

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Semiconductor Devices

diodes, bipolar junction transistors, high frequency transistors, field-effect transistors and power supplies in detail. Salient features;

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Nanoscale Silicon Devices

chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon;

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Nanoscale Silicon Devices

chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon;

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Integrated Hybrid Resonant DCDC Converters

efficiency of the power stage; Explores implementation details and concepts for integrated passives; Derives models, implements and compares to;

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Integrated Hybrid Resonant DCDC Converters

efficiency of the power stage; Explores implementation details and concepts for integrated passives; Derives models, implements and compares to;

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High-Frequency GaN Electronic Devices

concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers;

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Principles Of Electric Machines And Power Electronics

Principles of Electric Machines and Power Electronics, Third Edition combines the traditional areas of electric machinery with the latest;

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