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design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics;
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Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge;
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electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising;
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dawn of Gallium Oxide (Ga2O3) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon;
Vergelijkbare producten zoals Wide Bandgap Semiconductor Electronics And Devices
such as diamond, silicon carbide, PZT and gallium nitride. This book covers all important aspects of crystal growth and growth techniques;
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to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical;
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first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives;
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The rapidly advancing Silicon Carbide technology has demonstrated a great potential in high-power low-loss semiconductor electronics. High;
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This book elaborately discusses the silicon carbide devices and their technology. Lately, a few Silicon Carbide (SiC) power devices like;
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Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and;
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silicon carbide and gallium nitride. Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials;
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shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide;
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shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide;
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Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;
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Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;
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Silicon carbide (SiC) has been described as a suitable semiconductor material to use in MEMS and electronic devices for harsh environments;
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,and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave;
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Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications;
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fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach;
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The book presents an in-depth review and analysis of Silicon Carbide device processing. Keywords: Silicon Carbide, SiC, Technology;
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deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs;
Vergelijkbare producten zoals Nitride Semiconductor Light-Emitting Diodes (LEDs)
Silicon based materials and polymers are made of silicon containing polymers, mainly macromolecular siloxanes (silicones). This book covers;
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. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the;
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This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium;
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materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based;
Vergelijkbare producten zoals Nitride Semiconductor Light-Emitting Diodes (LEDs)
power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and;
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schemes; and semiconductor devices such as silicon, silicon carbide and gallium nitride. Meeting the standards required by industrial employers;
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