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III-Nitride Electronic Devices

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and;

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very;

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very;

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Iii-nitride Materials, Devices And Nano-structures

), photo-detectors and various optoelectronics and electronics devices and applications.The Nobel Prize in Physics 2014 was awarded jointly to;

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III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions

; surface and interface properties; electronic devices; energy conversion; controlled light-matter interactions; light-emitting diodes and growth;

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III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions

; surface and interface properties; electronic devices; energy conversion; controlled light-matter interactions; light-emitting diodes and growth;

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Gan-based Materials And Devices

nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet;

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III-Nitride Semiconductor Optoelectronics

III-Nitride Semiconductor Optoelectronicscovers the latest breakthrough research and exciting developments in the field of III-nitride;

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Molecular Beam Epitaxy

growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots;

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Progress in Semiconductor Materials V

quantum structures. Advances in the development of light sources, detectors, modulators, and electronic materials and devices are also explored;

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III-Nitride Semiconductors

is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the;

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III-Nitride Semiconductors

the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a;

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III-Nitride Semiconductors

Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards;

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Iii-nitride Semiconductor Materials

III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and;

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Gallium Nitride Processing for Electronics, Sensors and Spintronics

. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin;

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Properties Of Semiconductor Alloys

alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical;

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Ultrawide Bandgap Semiconductors

-art UWBG materials, structures, and devices Presents an in-depth discussion on electronic, photonic, thermal, and quantum;

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Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices

electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron;

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Stress and Strain Engineering at Nanoscale in Semiconductor Devices

design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the;

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A Plane-Wave Based K.P-Model to Study Semiconductor Nanostructures

understand the elastic and electronic properties of various semiconductor nanostructures like quantum dots, wires and wells. Within the present work;

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Iii-nitride Devices And Nanoengineering

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN;

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Semiconductor Material Technologies

the electronic devices. Section 5 describes about semiconductor structures for optoelectronic applications. Provide the reader with the;

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Wide Bandgap Semiconductor Power Devices

electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising;

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Gallium Nitride And Silicon Carbide Power Devices

structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made;

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Mechanical Shock

The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as;

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III-V Nitrides Semiconductors and Ceramics: From Material Growth to Device Applications

, green, blue and ultraviolet portions of the spectrum as emitters, detectors and high temperature electronics. LEDs based on wide badgap GaN;

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Gallium Nitride

Gallium nitride (GaN), a member of the family of III-V semiconductor compounds, has been investigated intensively and have found extensive;

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