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III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and;
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electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very;
Vergelijkbare producten zoals Nitride Wide Bandgap Semiconductor Material and Electronic Devices
electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very;
Vergelijkbare producten zoals Nitride Wide Bandgap Semiconductor Material and Electronic Devices
), photo-detectors and various optoelectronics and electronics devices and applications.The Nobel Prize in Physics 2014 was awarded jointly to;
Vergelijkbare producten zoals Iii-nitride Materials, Devices And Nano-structures
; surface and interface properties; electronic devices; energy conversion; controlled light-matter interactions; light-emitting diodes and growth;
Vergelijkbare producten zoals III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
; surface and interface properties; electronic devices; energy conversion; controlled light-matter interactions; light-emitting diodes and growth;
Vergelijkbare producten zoals III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet;
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III-Nitride Semiconductor Optoelectronicscovers the latest breakthrough research and exciting developments in the field of III-nitride;
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growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots;
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quantum structures. Advances in the development of light sources, detectors, modulators, and electronic materials and devices are also explored;
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is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the;
Vergelijkbare producten zoals III-Nitride Semiconductors
the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a;
Vergelijkbare producten zoals III-Nitride Semiconductors
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards;
Vergelijkbare producten zoals III-Nitride Semiconductors
III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and;
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. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin;
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alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical;
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-art UWBG materials, structures, and devices Presents an in-depth discussion on electronic, photonic, thermal, and quantum;
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electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron;
Vergelijkbare producten zoals Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices
design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the;
Vergelijkbare producten zoals Stress and Strain Engineering at Nanoscale in Semiconductor Devices
understand the elastic and electronic properties of various semiconductor nanostructures like quantum dots, wires and wells. Within the present work;
Vergelijkbare producten zoals A Plane-Wave Based K.P-Model to Study Semiconductor Nanostructures
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN;
Vergelijkbare producten zoals Iii-nitride Devices And Nanoengineering
the electronic devices. Section 5 describes about semiconductor structures for optoelectronic applications. Provide the reader with the;
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electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising;
Vergelijkbare producten zoals Wide Bandgap Semiconductor Power Devices
structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made;
Vergelijkbare producten zoals Gallium Nitride And Silicon Carbide Power Devices
The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as;
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, green, blue and ultraviolet portions of the spectrum as emitters, detectors and high temperature electronics. LEDs based on wide badgap GaN;
Vergelijkbare producten zoals III-V Nitrides Semiconductors and Ceramics: From Material Growth to Device Applications
Gallium nitride (GaN), a member of the family of III-V semiconductor compounds, has been investigated intensively and have found extensive;
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