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III-Nitride Electronic Devices

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and;

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Iii-nitride Materials, Devices And Nano-structures

Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are;

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Iii-nitride Devices And Nanoengineering

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN;

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and;

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and;

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III-Nitride Semiconductor Optoelectronics

III-Nitride Semiconductor Optoelectronicscovers the latest breakthrough research and exciting developments in the field of III-nitride;

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III-Nitride Semiconductors

is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the;

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III-Nitride Semiconductors

the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a;

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III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions

There has been tremendous progress lately in the field of III-nitride (GaN, AlN, InN) semiconductors and their device applications. For;

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III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions

There has been tremendous progress lately in the field of III-nitride (GaN, AlN, InN) semiconductors and their device applications. For;

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Gallium Nitride Processing for Electronics, Sensors and Spintronics

. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin;

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Progress in Semiconductor Materials V

This book reviews the progress on interband and intersubband transitions in semiconductors, including III-V, IV and II-VI materials and;

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III-Nitride Semiconductors

Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards;

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Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices

mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book;

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Gan-based Materials And Devices

nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet;

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Molecular Beam Epitaxy

in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE;

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Nanoengineering and Smart Materials

, biomedical devices, etc. This book is a compilation of chapters that discuss the most vital concepts and emerging trends in this field. It is meant;

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Iii-nitride Semiconductor Materials

III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and;

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Mechanical Shock

provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and;

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StemCell Nanoengineering

tissue engineering, applications of nanotechnology in stem cell tracking and molecular imaging, nano-devices, as well as stem cell nano;

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III-V Nitrides Semiconductors and Ceramics: From Material Growth to Device Applications

and its alloys, on optical properties and structural and electrical characterisation, quantum phenomena and light-emitting devices such as;

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Gallium Nitride

Gallium nitride (GaN), a member of the family of III-V semiconductor compounds, has been investigated intensively and have found extensive;

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Mid-infrared Optoelectronics

Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged;

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Heteroepitaxy of Semiconductors

development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever;

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Heteroepitaxy of Semiconductors

development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever;

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Compound Semiconductor Photonics

in the active and wide range of semiconductor photonics research. They include materials-related papers on III-As/P, III-nitride, quantum dot;

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Stress and Strain Engineering at Nanoscale in Semiconductor Devices

design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the;

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