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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and;

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and;

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Gan-based Materials And Devices

nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet;

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Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why;

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Wide Bandgap Semiconductors for Power Electronics - Materials, Devices, Applications

Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and;

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Ultrawide Bandgap Semiconductors

in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium;

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Wide Bandgap Semiconductor Electronics And Devices

Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide;

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Materials for High-Temperature Semiconductor Devices

. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the;

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ISE Electronic Principles

on the associated Online Learning Center. Electronic Principles' subject matter includes updated semiconductor devices and systems including;

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Semiconductor Material Technologies

the electronic devices. Section 5 describes about semiconductor structures for optoelectronic applications. Provide the reader with the;

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Silicon Carbide 2008 Materials, Processing and Devices

manufactured on this wide-bandgap semiconductor including: innovative device designs; characterization of device and materials properties; and;

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Progress in Semiconductor Materials V

quantum structures. Advances in the development of light sources, detectors, modulators, and electronic materials and devices are also explored;

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Power Microelectronics

most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on;

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Ultra-wide Bandgap Semiconductor Materials

Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content;

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Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices

-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for;

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III-Nitride Electronic Devices

power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and;

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Optically Induced Space-Charge Gratings in Wide-Bandgap Semiconductors

-steady-state photo-EMF effect for the investigation of wide- bandgap semiconductors and nanostructured materials, including photorefractive;

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Handbook of Luminescent Semiconductor Materials

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with;

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Handbook of Luminescent Semiconductor Materials

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with;

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Wide Bandgap Power Semiconductor Packaging

Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power;

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A Plane-Wave Based K.P-Model to Study Semiconductor Nanostructures

understand the elastic and electronic properties of various semiconductor nanostructures like quantum dots, wires and wells. Within the present work;

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Advanced Nanoelectronics

materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based;

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Next Generation Multilayer Graded Bandgap Solar Cells

these devices using low-cost and scalable electroplating is demonstrated. The value of electroplating for large area electronic devices such as;

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Molecular Beam Epitaxy

for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future;

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Gallium Nitride Gan

of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current;

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Gallium Nitride (GaN)

of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current;

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