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Advances in Gan, GAAS, Sic and Related Alloys on Silicon Substrates

-based electronic devices and sensors on silicon; GaN-based optical devices on silicon; GaN and related alloys on silicon growth and integration;

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Advances in Gan, GAAS, Sic and Related Alloys on Silicon Substrates

-based electronic devices and sensors on silicon; GaN-based optical devices on silicon; GaN and related alloys on silicon growth and integration;

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Gan-based Materials And Devices

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding;

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Iii-nitride Devices And Nanoengineering

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN;

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Power GaN Devices

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with;

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Gallium Nitride Gan

of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current;

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Gallium Nitride (GaN)

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;

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Gallium Nitride

Gallium nitride (GaN), a member of the family of III-V semiconductor compounds, has been investigated intensively and have found extensive;

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Advances in Photonics Engineering, Nanophotonics & Biophotonics

in reliability studies of both GaN electronic and photonic devices. Chapter Three studies the radiation effects in GaN-based materials and optoelectronic;

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Wide Band Gap Semiconductor Nanowires 1

GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices;

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High-Frequency GaN Electronic Devices

suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and;

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Optical and Spectroscopic Properties of Glass

optical and optoelectronic devices. New glass forming systems and non-oxidic glasses have therefore been developed. F.X. Gan is head of Chinese;

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GaN and Related Materials II

The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural;

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Iii-nitride Materials, Devices And Nano-structures

LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III;

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III-Nitride Semiconductors

phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related;

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Reliability Investigation of LED Devices for Public Light Applications

and analyses involved in the study and application of a number of different LED devices. The authors review GaN-based LED technology by;

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Semiconductors and Organic Materials for Optoelectronic Applications

of research based on II-VIsemiconductors on the one hand and III-V GaN based semiconductorson the other hand. Although these two areas are;

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Mechanical Shock

provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and;

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III-V Compound Semiconductors

present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a;

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III-V Compound Semiconductors

present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a;

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Handbook of Zinc Oxide and Related Materials

, photodetectors, and nanodevices. Covering key properties and important technologies of ZnO-based devices and nanoengineering, the handbook highlights;

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Handbook of Zinc Oxide and Related Materials

and important technologies of ZnO-based devices and nano-engineering, the handbook highlights the potential of this wide gap semiconductor. It;

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Nano-Semiconductors

With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must;

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Physics of Semiconductor Devices: Iwpsd-2003, Two-Volume Set

Physics of Semiconductor Devices provides a comprehensive description and insight into the latest trends in the semiconductor materials;

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III-V Nitrides Semiconductors and Ceramics: From Material Growth to Device Applications

, green, blue and ultraviolet portions of the spectrum as emitters, detectors and high temperature electronics. LEDs based on wide badgap GaN;

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Semiconductor Nanophotonics

devices. It covers epitaxial growth processes for GaAs- and GaN-based quantum dots and quantum wells, describes the fundamental optical;

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Wide Bandgap Semiconductor Electronics And Devices

Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide;

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