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Gallium Nitride Gan

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;

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Gallium Nitride (GaN)

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;

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Power GaN Devices

fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach;

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GaN-Based Tri-Gate High Electron Mobility Transistors.

fields and peak electron velocities, GaN-based high electron mobility transistors (HEMTs) have recently prevailed in high-power systems operating;

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Modern Power Electronic Devices

Power devices are key to modern power systems, performing essential functions such as inverting and changing voltages, buffering, and;

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Advances in Gan, GAAS, Sic and Related Alloys on Silicon Substrates

on III-V materials and devices on silicon substrates from universities, national laboratories and industries worldwide. Topics include: GaN;

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Advances in Gan, GAAS, Sic and Related Alloys on Silicon Substrates

on III-V materials and devices on silicon substrates from universities, national laboratories and industries worldwide. Topics include: GaN;

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Integrated Power Devices and TCAD Simulation

also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a;

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Integrated Power Devices and TCAD Simulation

also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a;

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Wide Band Gap Semiconductor Nanowires 1

GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices;

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Iii-nitride Devices And Nanoengineering

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN;

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Power Microelectronics

need a reference for detailed theory and working knowledge of processes in the field of power semiconductor devices.'IEEE Electrical Insulation;

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Gan-based Materials And Devices

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding;

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Gallium Nitride

applications. Recent development has suggested that GaN may be used as an excellent host material for light-emitting devices (LEDs) that operate in the;

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Wide Band Gap Semiconductor Nanowires Fo

This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the;

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High Performance Gan Light-Emitting Diode

The reliability of InGaNGaN light emitting diodes (LEDs) with different emission wavelengths and different geometries was studied. Device;

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Gallium Nitride And Silicon Carbide Power Devices

structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made;

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Reliability Investigation of LED Devices for Public Light Applications

Reliability Investigation of LED Devices for Public Light Applications focuses on state-of-the-art GaN-based LED technology through the;

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GaN and Related Materials II

The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural;

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Wideband GaN Microwave Power Amplifiers with Class-G Supply Modulation (Band 48

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RF Technologies for Low Power Wireless Communications

coverage of:* Advanced GaAs-based HBT designs* InP-based devices and circuits* Si/SiGe HBT technology* Noise in GaN devices* Power amplifier;

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Advances in Photonics Engineering, Nanophotonics & Biophotonics

in reliability studies of both GaN electronic and photonic devices. Chapter Three studies the radiation effects in GaN-based materials and optoelectronic;

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Properties, Processing and Applications of Gallium Nitride and Related Semi-Conductors

,and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave;

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Handbook of RF and Microwave Power Amplifiers

transistor power amplifiers. A team of expert authors brings you up to speed on every topic, including: devices (Si LDMOS and VDMOS, GaAs FETs, GaN;

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Wide Bandgap Power Semiconductor Packaging

bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as;

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Microwave and MM Wave Vacuum Electron Devices

types of microwave tubes, and despite competition from solid-state devices (those using GaN, SiC, et cetera), which continue to be used widely;

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Pulse width Modulated DC DC Power Conver

, synthesis, analysis and design of PWM power converters and semiconductor power devices, including wide band-gap power devices (SiC and GaN). * Fully;

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