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GaN-Based Tri-Gate High Electron Mobility Transistors.

fields and peak electron velocities, GaN-based high electron mobility transistors (HEMTs) have recently prevailed in high-power systems operating;

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Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors

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Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors

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Handbook for III-V High Electron Mobility Transistor Technologies

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details;

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Gallium Nitride Gan

serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it;

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Gallium Nitride (GaN)

serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it;

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Highly Integrated Gate Drivers for Si and GaN Power Transistors

This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along;

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Highly Integrated Gate Drivers for Si and GaN Power Transistors

This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along;

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Integrated Power Devices and TCAD Simulation

also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a;

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Integrated Power Devices and TCAD Simulation

also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a;

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Electron Gas

, and the electron scattering mechanisms in a wide temperature range. Finally, the authors demonstrate high-performance InGaN-based light;

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Gan-based Materials And Devices

nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet;

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Power GaN Devices

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with;

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very;

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very;

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Properties, Processing and Applications of Gallium Nitride and Related Semi-Conductors

,and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave;

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Reliability of high-k / metal gate field-effect transistors considering circuit operational constraints

After many decades, the scaling of silicon dioxide based field-effect transistors has reached insurmountable physical limits due;

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RF and Microwave Passive and Active Technologies

junction and heterojunction transistors, and high mobility electron transistors (HMETs). The book also features a completely rewritten section on;

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Nanoscale Silicon Devices

nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer;

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Nanoscale Silicon Devices

nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer;

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Fundamentals Of Iii-V Devices

electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment;

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Nano-CMOS Gate Dielectric Engineering

of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text;

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Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices

electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron;

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ZnO: From Fundamental Properties Towards Novel Applications

high electron mobility transistors (HEMT). The IT industry is still mainly based on Si and will remain so in the foreseeable nearer future.;

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High-Frequency GaN Electronic Devices

as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on;

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Short-Channel Organic Thin-Film Transistors

This work takes advantage of high-resolution silicon stencil masks to build air-stable complementary OTFTs using a low-temperature;

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Nanoscale Mos Transistors

orientations and strain conditions, and new channel and gate stack materials * All the relevant transport regimes, ranging from low field mobility to;

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