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Gallium Nitride Gan

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;

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Gallium Nitride (GaN)

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;

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Gan-based Materials And Devices

nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet;

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High-Frequency GaN Electronic Devices

concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers;

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GaN-Based Tri-Gate High Electron Mobility Transistors.

fields and peak electron velocities, GaN-based high electron mobility transistors (HEMTs) have recently prevailed in high-power systems operating;

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Ceramic Materials and Multilayer Electronic Devices

This volume contains a collection of 40 papers from two symposia: Advanced Dielectric Materials and Multilayer Electronic Devices and High;

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Advances in Gan, GAAS, Sic and Related Alloys on Silicon Substrates

-based electronic devices and sensors on silicon; GaN-based optical devices on silicon; GaN and related alloys on silicon growth and integration;

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Advances in Gan, GAAS, Sic and Related Alloys on Silicon Substrates

-based electronic devices and sensors on silicon; GaN-based optical devices on silicon; GaN and related alloys on silicon growth and integration;

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Y-type Hexagonal Ferrite for Hyper-Frequency

With the rapid development of modern electronic technology, miniaturisation, integration and high frequency have become the trends;

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Wide Bandgap Semiconductor Electronics And Devices

characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields;

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Wide Bandgap Power Semiconductor Packaging

semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete;

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Physics of Semiconductor Devices: Iwpsd-2003, Two-Volume Set

technologies are dealt in one section. Separate sections on emerging technologies, nanostructures, high frequency devices, and optoelectronics;

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Negative Group Delay Devices

experimental high-performance electronic devices, and novel design features of radio frequency (RF) and microwave electronic devices, such as filters;

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GaN and Related Materials II

characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where;

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Fundamentals of Electronics: Book 3

develops the high- and low-frequency response of a variety of common electronic amplifiers. The final chapter expands the frequency-dependent;

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Contemporary Developments in High-Frequency Photonic Devices

-Frequency Photonic Devices is a crucial research book that examines high-frequency photonics and their applications in communication engineering;

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Power GaN Devices

fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach;

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very;

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very;

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Modern Power Electronic Devices

- and materials science, and power electronic applications. It provides key information for researchers working with power electronic devices;

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Gallium Nitride

applications. Recent development has suggested that GaN may be used as an excellent host material for light-emitting devices (LEDs) that operate in the;

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Advances in Photonics Engineering, Nanophotonics & Biophotonics

in reliability studies of both GaN electronic and photonic devices. Chapter Three studies the radiation effects in GaN-based materials and optoelectronic;

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High Performance Gan Light-Emitting Diode

The reliability of InGaNGaN light emitting diodes (LEDs) with different emission wavelengths and different geometries was studied. Device;

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Electronic Power Control

work has been extended with recent applications of power electronics such as high frequency inductive heating, improving the power factor (PFC;

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Harmonics in Offshore Wind Power Plants

and other power electronic devices in the transmission system on the other. The book particularly focuses on voltage-sourced converter high;

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III-Nitride Electronic Devices

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and;

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High Performance Materials And Devices For High-speed Electronic Systems

covered in this volume includes various aspects of high performance materials and devices for implementing High-Speed Electronic systems.;

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