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Hot-Carrier Effects in MOS Devices

carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself;

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Carrier Transport in Nanoscale MOS Transistors

progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations * The authors approach the subject in a;

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Technology CAD - Computer Simulation of IC Processes and Devices

129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non;

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Semiconductor Device And Failure Analysis

emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors;

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Ionizing Radiation Effects In Mos Devices And Circuits

The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test;

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Radiation Defects in Ion Implanted &/or High-Energy Irradiated MOS Structures

is (and it will be in the next several decades) the basis of electronic and microelectronic devices. Some MOS devices are faced with the necessity;

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Semiconductor Process Reliability in Practice

device physics Process flow for MOS manufacturing Measurements useful for device reliability characterization Hot carrier injection Gate;

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MOS Devices for Low-Voltage and Low-Energy Applications

Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications * Based on timely published and;

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ULSI Devices

of semiconductor devices, has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and;

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Devices for Integrated Circuits

junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs). Basic concepts from quantum and;

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Physics of Semiconductor Devices 4e

, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors;

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Mosfet Modeling For Vlsi Simulation

A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college;

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MOS Interface Physics, Process and Characterization

The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated;

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Power Semiconductor Devices and Circuits

: modern power devices, simulation, circuits and control concepts, and future trends. Among the topics are the MOS controlled thyristor, high-power;

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Vibrational Properties of Defective Oxides and 2D Nanolattices

Ge and III-V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D;

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Charge Carrier Transport in Organic Semiconductor Thin Film Devices

In this book we investigate mechanism of charge carrier transport in organic semiconductor thin film devices (OTFDs). Numerical models for;

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Radiation Effects in Semiconductors

obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects;

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Analog MOS Integrated Circuits for Signal Processing

Describes the operating principles of analog MOS integrated circuits and how to design and use such circuits. The initial section explores;

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Introduction to Semiconductor Materials and Devices

An advanced text which provides coverage of elementary theory and the properties of semiconductors, carrier transport, physics of junctions;

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Nanoelectronics

nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as;

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Reliability and Failure of Electronic Materials and Devices

Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single;

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Tradeoffs and Optimization in Analog CMOS Design

design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It;

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Nanoplasmonics

materials and devices. Newly discovered physical phenomena include local mode of surface plasmon polariton excited in nanoparticles, hot spots on;

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Charge-Based Mos Transistor Modeling

Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their;

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Basics of CMOS Cell Design

for designing and simulating CMOS integrated circuits in deep-submicron technology, including MOS devices...inverters...interconnects...basic;

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Near-equilibrium Transport

These lectures are designed to introduce students to the fundamentals of carrier transport in nano-devices using a novel, bottom up;

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Near-equilibrium Transport

These lectures are designed to introduce students to the fundamentals of carrier transport in nano-devices using a novel, bottom up;

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