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Gallium nitride (GaN), a member of the family of III-V semiconductor compounds, has been investigated intensively and have found extensive;
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deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs;
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magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential;
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Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge;
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materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based;
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Semiconducting oxides and nitrides are becoming the most important s- jects in materials science. In particular, zinc oxide (ZnO), gallium;
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multiferroics. The author has also included novel methods for making gallium nitride, boron nitride and such materials, by using precursors and the urea;
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This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application;
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research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the;
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dawn of Gallium Oxide (Ga2O3) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon;
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in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium;
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During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device;
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Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad;
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Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad;
Vergelijkbare producten zoals Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA
Since the early 1990s when highly efficient gallium nitride blue and ultraviolet LEDs and laser diodes were first demonstrated, the world;
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Gallium Nitride and its alloys with InN and AlN, have recently emerged as important semiconductor materials with application to yellow;
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Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;
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Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;
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experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will;
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Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and;
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laser diodes (LDs) based on gallium nitride and related nitride semiconductors, and gives an outline of their structural, transport and optical;
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This book brings together innovative methodologies and strategies adopted in the research and developments of Advanced 2D Materials. Well;
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provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and;
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and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used;
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This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium;
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Nitride Phosphors and Solid-State Lighting provides an in-depth introduction to the crystal chemistry, synthesis, luminescence, and;
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