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Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride

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Gan and Related Alloys 1999

in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers;

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III-Nitride Semiconductors

epitaxy, epitaxial lateral overgrowth, hydride vapor phase epitaxial growth, as well as substrate issues and characterization results.;

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Nitride Semiconductor Light-Emitting Diodes (LEDs)

epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques and the growth of nitride-based;

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Oxide and Nitride Semiconductors

nitride (GaN), and related compounds form a novel class of semiconductors which possess unique properties in terms of crystallography, crystal;

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Nitride Semiconductor Light-Emitting Diodes (LEDs)

and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor;

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Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials

Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the;

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Silicon Molecular Beam Epitaxy

This book focuses on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. It discusses the;

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Study of III-Nitrides Heterostructures Grown By Molecular Beam Epitaxy

Various techniques have been used to grow III-nitride heterostructures including metalorganic vapor deposition, hydride vapor epitaxy and;

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Progress in Solid State Chemistry Research

processes in solids. Research areas include: bonding in solids, crystal chemistry, crystal growth mechanisms, diffusion epitaxy, high-pressure;

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Solid State Chemistry Research Trends

processes in solids. Research areas include: bonding in solids, crystal chemistry, crystal growth mechanisms, diffusion epitaxy, high-pressure;

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New Research on Solid State Chemistry

and processes in solids. Research areas include: bonding in solids, crystal chemistry, crystal growth mechanisms, diffusion epitaxy, high;

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Porous Silicon Carbide and Gallium Nitride

Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge;

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Nucleation Theory and Growth of Nanostructures

book shows how the advanced nucleation theory can be used in modeling of growth properties, morphology and crystal phase of such nanostructures;

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Trends in Crystal Growth Research

, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapour deposition, growth of III;

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New Topics in Crystal Growth Research

, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapour deposition, growth of III;

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Focus on Crystal Growth Research

, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapour deposition, growth of III;

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Crystal Growth Technology

such as diamond, silicon carbide, PZT and gallium nitride. This book covers all important aspects of crystal growth and growth techniques;

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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si;

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Chemical Beam Epitaxy And Related Techniques

established molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE), CBE provides a capability for the epitaxial growth;

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Epitaxy of Semiconductors

and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and;

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Epitaxy of Semiconductors

of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and;

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Epitaxy of Semiconductors

of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and;

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Properties, Processing and Applications of Gallium Nitride and Related Semi-Conductors

Since the early 1990s when highly efficient gallium nitride blue and ultraviolet LEDs and laser diodes were first demonstrated, the world;

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Gallium Nitride Processing for Electronics, Sensors and Spintronics

magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential;

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Trends in Semiconductor Research

-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and;

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New Developments in Semiconductor Research

-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and;

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