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Electrical Properties of n-GaN based MOS type Schottky Junctions

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Electrical Transport Properties of Single III-Nitride Nanowires

The electrical transport properties studies on single GaN and InN nanowires were studied. First, we report studies on the effect of UV;

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Devices for Integrated Circuits

junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs). Basic concepts from quantum and;

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Schottky Barriers

, the authors discuss various empirical models. In closing, AlGaNGaN Schottky barrier diodes with and without in-situ silicon carbon nitride;

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Electrical and Optoelectronic Properties of the Nanodevices Composed of Two-Dimensional Materials

This thesis focuses on the transport and magneto-transport properties of graphene p-n-p junctions, such as the pronounced quantum Hall;

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MOS (Metal Oxide Semiconductor) Physics and Technology

Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology;

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Electrical Engineering

. The book covers aspects of electrical science including Ohm and Kirkoff's laws, P-N junctions, semiconductors, circuit diagrams, magnetic;

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Oxide and Nitride Semiconductors

covers processing, properties, and applications of materials based on ZnO, GaN, and related compounds.;

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Nanoelectronic Devices

basics of electron transport and p-n junctions, develops the operations of MOS capacitors and MOSFETs and introduces some basic CMOS circuits;

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DC, microwave, noise, and degradation properties of GaN based HEMTs

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Electrical Properties of Materials

Features many subjects like organic semiconductors and artificial materials. This book discusses a n;...

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MOS System

the ideal MOS system, physical and electrical properties of high-k oxides, their dielectric constants, and energy offsets to semiconductors;

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Gallium Nitride And Silicon Carbide Power Devices

Schottky RectifiersP-i-N RectifiersMPS Rectifiers

Capacitance Spectroscopy of Semiconductors

Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and;

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Layout Techniques for MOSFETs

Complementary MOS (CMOS) integrated circuits (ICs) manufacturing processes. These innovative layout styles are based on pn junctions engineering between;

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Charge-Based Mos Transistor Modeling

charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device;

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Reliability Investigation of LED Devices for Public Light Applications

Reliability Investigation of LED Devices for Public Light Applications focuses on state-of-the-art GaN-based LED technology through the;

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Molecular Semiconductors

experimental electrical properties. For inorganic materials a simple definition delimits a fairly homogeneous family. If an inorganic material has a;

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Gallium Nitride

topics on the structure, thermal properties and applications of GaN. Some of these topics include the effects of radiation damage in GaN and and;

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Power GaN Devices

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with;

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Physics of Carbon Nanotube Devices

, field emission, optoelectronics and sensing. * Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport;

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Physics of Schottky Electron Sources

: what is the Schottky electron emitter? How does it work? And how do its properties affect the performance of electron beam equipment? The;

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P-Type Transparent Semiconducting Delafossite CuA102+x Thin Film

versions of various new types of p-type transparent conducting oxides with improved optical and electrical properties have been synthesised in the;

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Optical and Spectroscopic Properties of Glass

Glass is an old material widely used for many applications. Modern optical technology calls for new glasses with special properties for;

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III-Nitride Semiconductors

phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related;

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Nanoelectronics

alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power;

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Gan-based Materials And Devices

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding;

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