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AlGaN/GaN HEMTs Reliability

AlGaNGaN HEMTs Reliability is een boek van Cuvillier Verlag;

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Handbook for III-V High Electron Mobility Transistor Technologies

)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaNGaN;

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Plasmaunterstutzte Molekularstrahlepitaxie von AlGaN/GaN-Heterostrukturen

Ziel dieser Arbeit ist die Herstellung hochqualitativer AlGaNGaN-Heterostrukturen mittels Molekularstrahlepitaxie (MBE) fur die Anwendung;

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Power GaN Devices

normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based;

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GaN-Based Tri-Gate High Electron Mobility Transistors.

fields and peak electron velocities, GaN-based high electron mobility transistors (HEMTs) have recently prevailed in high-power systems operating;

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Handbook of RF and Microwave Power Amplifiers

transistor power amplifiers. A team of expert authors brings you up to speed on every topic, including: devices (Si LDMOS and VDMOS, GaAs FETs, GaN;

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Advances in Applied Physics Research

in piezoelectric AlGaNGaN heterostructures; fluorescence resonance energy transfer between CdTe quantum dots and organic dye; and band offsets;

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High-Frequency GaN Electronic Devices

readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device;

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High Performance Gan Light-Emitting Diode

The reliability of InGaNGaN light emitting diodes (LEDs) with different emission wavelengths and different geometries was studied. Device;

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Electron Gas

-emitting diodes with tunneling-junction-induced 2-D electron gas at an AlGaNGaN heterostructure, which is inserted in the middle of the P++-GaN;

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Reliability Investigation of LED Devices for Public Light Applications

Reliability Investigation of LED Devices for Public Light Applications focuses on state-of-the-art GaN-based LED technology through the;

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Reliability of Semiconductor Lasers and Optoelectronic Devices

Reliability of Semiconductor Lasers and Optoelectronic Devices simplifies complex concepts of optoelectronics reliability with approachable;

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Wide Bandgap Semiconductor Electronics And Devices

dawn of Gallium Oxide (Ga2O3) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon;

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Schottky Barriers

, the authors discuss various empirical models. In closing, AlGaNGaN Schottky barrier diodes with and without in-situ silicon carbon nitride;

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Advances in Photonics Engineering, Nanophotonics & Biophotonics

in reliability studies of both GaN electronic and photonic devices. Chapter Three studies the radiation effects in GaN-based materials and optoelectronic;

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Gallium Nitride

Gallium nitride (GaN), a member of the family of III-V semiconductor compounds, has been investigated intensively and have found extensive;

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Wide Bandgap Power Semiconductor Packaging

Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power;

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Gallium Nitride Gan

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;

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Gallium Nitride (GaN)

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;

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Integrated Power Devices and TCAD Simulation

also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a;

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Integrated Power Devices and TCAD Simulation

also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a;

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Generative Adversarial Networks Cookbook

Understand the common architecture of different types of GANs Train, optimize, and deploy GAN applications using TensorFlow and Keras Build;

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Einde inhoud

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