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Plasmaunterstutzte Molekularstrahlepitaxie von AlGaN/GaN-Heterostrukturen

Ziel dieser Arbeit ist die Herstellung hochqualitativer AlGaNGaN-Heterostrukturen mittels Molekularstrahlepitaxie (MBE) fur die Anwendung;

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AlGaN/GaN HEMTs Reliability

AlGaNGaN HEMTs Reliability is een boek van Cuvillier Verlag;

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Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors

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Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors

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MeV-Elektronenbestrahlung von Si-Heterostrukturen

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Advances in Applied Physics Research

in piezoelectric AlGaNGaN heterostructures; fluorescence resonance energy transfer between CdTe quantum dots and organic dye; and band offsets;

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Handbook for III-V High Electron Mobility Transistor Technologies

followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaNGaN HEMTs. The book also provides;

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Electron Gas

-emitting diodes with tunneling-junction-induced 2-D electron gas at an AlGaNGaN heterostructure, which is inserted in the middle of the P++-GaN;

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Crooked House . ALGAN DARCHE, CD

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Wide Bandgap Semiconductor Electronics And Devices

dawn of Gallium Oxide (Ga2O3) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon;

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Schottky Barriers

, the authors discuss various empirical models. In closing, AlGaNGaN Schottky barrier diodes with and without in-situ silicon carbon nitride;

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Vividly Guest: Gan Guo GUEST: GAN GUO. PIERRE BENSUSAN, CD

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Gallium Nitride

Gallium nitride (GaN), a member of the family of III-V semiconductor compounds, has been investigated intensively and have found extensive;

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Gallium Nitride Gan

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;

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Gallium Nitride (GaN)

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;

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Generative Adversarial Networks Cookbook

Understand the common architecture of different types of GANs Train, optimize, and deploy GAN applications using TensorFlow and Keras Build;

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Iii-nitride Materials, Devices And Nano-structures

Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent;

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Generative Adversarial Networks for Image-to-Image Translation

Generative Adversarial Networks (GAN) have started a revolution in Deep Learning, and today GAN is one of the most researched topics;

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Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications

Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications is een boek van Cuvillier Verlag;

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Crist ym mreichiau'r credadyn, wedi ei osod allan mewn pregeth ar Luc ii.28. Gan y parch. Ebenezer Erskine, M.A. At ba un y chwanegwyd, pregeth arall, a elwir, dadl ffydd ar air a chyfammod Duw, Salm LXXIV.20. gan y parch

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Himalaya . GUO GAN, CD

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Spatial Audio

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Swordmen . Guo Gan Trio, CD

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Advances in Gan, GAAS, Sic and Related Alloys on Silicon Substrates

achievable with either CS and CMOS alone, with CMOS affordability. The strong and increasing interest in GaN, GaAs, SiC and related alloys on silicon;

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Advances in Gan, GAAS, Sic and Related Alloys on Silicon Substrates

achievable with either CS and CMOS alone, with CMOS affordability. The strong and increasing interest in GaN, GaAs, SiC and related alloys on silicon;

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Gwledd O Gan . COR DYFNANT, CD

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Do That Again?...Again!?! . Gan, CD

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