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The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs;
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control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive;
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Nanowire Field Effect Transistor: Basic Principles and Applications places an emphasis on the application aspects of nanowire field effect;
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properties and self-consistent simulations of carbon nanotubes in transistor technology; the future developments in the nanowire field-effect;
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. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the;
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partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect;
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orientations and strain conditions, and new channel and gate stack materials * All the relevant transport regimes, ranging from low field mobility to;
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-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction;
Vergelijkbare producten zoals Integrated Power Devices and TCAD Simulation
-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction;
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After many decades, the scaling of silicon dioxide based field-effect transistors has reached insurmountable physical limits due;
Vergelijkbare producten zoals Reliability of high-k / metal gate field-effect transistors considering circuit operational constraints
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-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses;
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), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical;
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Cross-linked Polymers as Dielectrics for Organic Field-effect Transistors is een boek van Cuvillier Verlag;
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junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs). Basic concepts from quantum and;
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This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This;
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Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind;
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covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, Nano-CMOS Gate Dielectric Engineering;
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A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a;
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, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies;
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efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers;
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efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers;
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junction gate field-effect transistor, silicon controlled rectifier and operational amplifier. Two separate chapters on Introduction to;
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, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional;
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An introduction to solid state device including field effect and bipolar transistors. Contents: 1) Conductors, Semiconductors and Diodes. 2;
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