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Advances In Geosciences - Volume 18

This invaluable volume set of Advances in Geosciences continues the excellent tradition of the Asia-;...

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Small Studios

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Gallium Nitride

Gallium nitride (GaN), a member of the family of III-V semiconductor compounds, has been investigated intensively and have found extensive;

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AlGaN/GaN HEMTs Reliability

AlGaNGaN HEMTs Reliability is een boek van Cuvillier Verlag;

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Gallium Nitride Gan

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;

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Gallium Nitride (GaN)

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;

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Generative Adversarial Networks Cookbook

Understand the common architecture of different types of GANs Train, optimize, and deploy GAN applications using TensorFlow and Keras Build;

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Generative Adversarial Networks for Image-to-Image Translation

Generative Adversarial Networks (GAN) have started a revolution in Deep Learning, and today GAN is one of the most researched topics;

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Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications

Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications is een boek van Cuvillier Verlag;

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Creating Web-based Laboratories

Covers the transmission of real-time video and audio for internet experimentation. Provides ;...

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Spatial Audio

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Advances in Gan, GAAS, Sic and Related Alloys on Silicon Substrates

achievable with either CS and CMOS alone, with CMOS affordability. The strong and increasing interest in GaN, GaAs, SiC and related alloys on silicon;

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Advances in Gan, GAAS, Sic and Related Alloys on Silicon Substrates

achievable with either CS and CMOS alone, with CMOS affordability. The strong and increasing interest in GaN, GaAs, SiC and related alloys on silicon;

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Power GaN Devices

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with;

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Wide Band Gap Semiconductor Nanowires 1

GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices;

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GaN-Based Tri-Gate High Electron Mobility Transistors.

fields and peak electron velocities, GaN-based high electron mobility transistors (HEMTs) have recently prevailed in high-power systems operating;

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