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Group IV Heterostructures, Physics and Devices (Si, Ge, C, Sn)

These proceedings contain the majority of papers presented atSymposium D, "Group IV heterostructures, physics and devices(Si;

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Organometallic Compounds of Low-Coordinate Si, Ge, Sn and Pb

characterizable and readily available organometallic reagents. Organometallic Compounds of Low-Coordinate Si, Ge, Sn and Pb describes the chemistry;

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Quantum Confined Semiconductor Nanostructures

/SiGe nanostructures and applications of Group IV nanoscale materials.;

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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications;

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Quantum Heterostructures

microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for;

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Quantum Heterostructures

microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for;

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Semiconductor Device Physics and Design

heterostructures and strained heterostructures. The book then details the important devices ranging from p-n diodes to bipolar and field effect devices. By;

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Silicon-Based Photonics

region. Ge- and GeSn-Si heterostructures with different elastic strain levels already provide expansion of the spectral range, high-speed;

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Interface properties of amorphous/crystalline silicon heterojunctions

of interfaces in a-Si: Hc-Si heterostructures, particularly the electronic quality of the a-Si: Hc-Si heterointerface and its effect on the subsequent;

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Mid-infrared Optoelectronics

research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the;

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Physics And Modeling Of Tera- And Nano-devices

Physics and Modeling of Tera- and Nano-Devices is a compilation of papers by well-respected researchers working in the field of physics and;

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Nanomaterials for Lithium-Ion Batteries

, some already used in commercial batteries and others still in development. They include nanostructured anode materials based on Si, Ge, Sn, and;

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High-Speed Heterostructure Devices

devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as;

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High-Speed Heterostructure Devices

devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as;

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Metal Impurities in Silicon- and Germanium-Based Technologies

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the;

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Vibrational Properties of Defective Oxides and 2D Nanolattices

Ge and III-V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D;

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Low-Dimensional Semiconductor Structures

Low-Dimensional Semiconductor Structures provides a seamless, atoms-to-devices introduction to the latest quantum heterostructures. It;

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Low-Dimensional Semiconductor Structures

Low-Dimensional Semiconductor Structures provides a seamless, atoms-to-devices introduction to the latest quantum heterostructures. It;

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Angle-Resolved Photoemission Spectroscopy Studies of 2D Material Heterostructures

material heterostructures: graphene/h-BN, twisted bilayer graphene, and topological insulator/high-temperature superconductors. Since the discovery;

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Semiconductor Laser Theory

, quantum cascade, vertical-cavity surface-emitting, single-mode and tunable, nitride, group IV, and transistor lasers. This textbook equips;

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Infrared Applications of Semiconductors II

Advances in the growth of novel-engineered structures such as sophisticated semiconductor superlattices and heterostructures, as well as;

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III V Compound Semiconductors and Devices

of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices;

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Narrow Gap Semiconductors

). In particular, it explores the latest findings in the fundamental physics of narrow gap materials and quantum heterostructures as well as device physics;

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Phonons in Nanostructures

with enhanced functionality and even novel devices with new operating principles. The critical role of phonon effects in such semiconductor;

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Phonons in Nanostructures

with enhanced functionality and even novel devices with new operating principles. The critical role of phonon effects in such semiconductor;

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Quantum Dots on Patterned Substrates

patterned substrates. Finally, Chap. 5 tackles the problem of mixing between Ge and Si, and gives some theoretical predictions for realistic GeSi;

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SiGe Heterojunction Bipolar Transistors

enabling devices in a wide range of products for wireless and wired communications.This book: features SiGe products which include chip sets for;

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