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Resistive Random Access Memory (RRAM)

RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory;

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Resistive Random Access Memory (RRAM)

RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory;

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Nonvolatile Memory Design

, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access;

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Nonvolatile Memory Design

, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access;

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Advances in Non-volatile Memory and Storage Technology

, charge trapping and resistive random access memory;

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Materials and Technology for Nonvolatile Memories

memories, organic memories, resistive switching memories (ReRAM), magnetoresistive random access memories (MRAM), ferroelectric random access;

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DRAM (Dynamic Random Access Memory) Process Flow

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Resistive Switching

of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An;

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Cross Section of DRAM (Dynamic Random Access Memory)

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Materials Science and Technology for Nonvolatile Memories

in multimedia and other mobile applications where electronic components are replacing magnetic hard drives. Today, Flash is the main nonvolatile memory;

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Materials Science and Technology for Nonvolatile Memories

in multimedia and other mobile applications where electronic components are replacing magnetic hard drives. Today, Flash is the main nonvolatile memory;

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ReRAM-based Machine Learning

-low power and high-density embedded storage. Resistive Random-Access Memory (ReRAM) technology seems the most promising IMC solution due to;

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Memristors And Memristive Systems

meminductance. Details are shown for recent applications of memristors for resistive random access memories, neuromorphic systems and hybrid CMOS;

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New Memory Paradigms: Memristive Phenomena and Neuromorphic Applications

of the memristor (memory + resistor), Redox-based resistive switching Random Access Memories (ReRAM) and Phase Change Memories (PCM) are thought;

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Nanoscale Redox Reaction at Metal/Oxide Interface

resistive random access memory structure.;

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Nanoscale Electronic Devices and Their Applications

(PCM), memristor, and resistive random-access memory (ReRAM) are also discussed. In addition, some applications of these phase-change devices;

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Mega-Bit Memory Technology - From Mega-Bit to Giga-Bit

This book describes LSI process technology, and focuses on the rapid progress of state-of-the-art dynamic random access memory (DRAM;

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Mega-Bit Memory Technology - From Mega-Bit to Giga-Bit: From Mega-Bit to Giga-Bit

This book describes LSI process technology, and focuses on the rapid progress of state-of-the-art dynamic random access memory (DRAM;

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Variation-Aware Advanced CMOS Devices and SRAM

the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical;

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Applications of Emerging Memory Technology

, NVSRAM, NVTCAM, Hybrid CMOS-RRAM circuits for: Machine Learning, In-Memory Computing, Hardware Security - RNG/PUF, Biosensing and other misc;

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VLSI

nonvolatile memories such as resistive random-access memory (Re-RAM), magneto-resistive RAM (MRAM), and floating-body RAM (FB-RAM) Explores organic;

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Introduction to Magnetic Random-Access Memory

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors;

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Advanced Semiconductor Memories

) * High Performance Dynamic Random Access Memory-DDRs, synchronous DRAM/SGRAM features and architectures, EDRAM, CDRAM, Gigabit DRAM scaling;

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Giant Magneto-Resistance Devices

is novel magnetic random-access memory (MRAM) with non-volatile non-destructive and radiation-hard characteristics. ;

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Advances in Solid State Circuit Technologies

of the research on the QC effect in CF-based non-volatile RS devices including basic QC phenomenon in resistive random access memory (RRAM), RS;

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Random Access . Unisonlab, CD

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Ferroelectric Gate Field Effect Transistor Memories

of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for;

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