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Variation-Aware Advanced CMOS Devices and SRAM

understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The;

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Low Power and Reliable SRAM Memory Cell and Array Design

addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials;

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Advanced CMOS Cell Design

Simulating Complex CMOS Integrated Circuits! An essential working tool for electronic circuit designers and students alike, Advanced CMOS Cell;

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Fundamentals Of Ultra-Thin-Body Mosfets And Finfets

, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM * Provides design criteria for nanoscale;

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VLSI and Post-CMOS Electronics

-CMOS device and circuit design, high-performance compound semiconductor devices and applications, process variability in FinFETs, and other;

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Esd Physics And Devices

requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium;

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Nanoscale CMOS VLSI Circuits

failure. Covering the latest devices, technologies, and processes, Nanoscale CMOS VLSI Circuits: Design for Manufacturability focuses on;

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Advanced Nanoelectronics

An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will;

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Emerging Technologies and Circuits

aspects of emerging technologies and devices, advanced circuit design, reliability, variability issues and solutions, advanced memories and analog;

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Intelligent Integrated Systems

for future intelligent integrated systems. It highlights advanced ailicon-based CMOS technologies. New device and functional architectures are;

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Nanoscale CMOS

modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap;

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Design of CMOS Millimeter-Wave and Terahertz Integrated Circuits with Metamaterials

(THz) electronic circuits and systems in CMOS technology faces new challenges and requires new devices. Design of CMOS Millimeter-Wave and;

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Beyond CMOS Technologies for Next Generation Computer Design

This book describes the bottleneck faced soon by designers of traditional CMOS devices, due to device scaling, power and energy consumption;

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CMOS RF Circuit Design for Reliability and Variability

The subject of this book is CMOS RF circuit design for reliability. The device reliability and process variation issues on RF transmitter;

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Materials and Devices for End-Of-Roadmap and Beyond CMOS Scaling

This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J;

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Nanotechnology

concepts, ranging from advanced and non-conventional CMOS and semiconductor nanowire devices, via various spin-controlled logic devices and;

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Atomic-Scale Electronics Beyond CMOS

principles behind, and technological implementations for many devices that are now expected to become key elements of the future of nanoelectronics;

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Frontiers In Electronics - Proceedings Of The Workshop On Frontiers In Electronics 2009

Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and;

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3D TCAD Simulation for CMOS Nanoeletronic Devices

This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal;

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3D TCAD Simulation for CMOS Nanoeletronic Devices

This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal;

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Development of CMOS-MEMS/NEMS Devices

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CMOS Analog and Mixed-Signal Circuit Design

an introduction to the CMOS analog and mixed-signal circuit design with further coverage of basic devices, such as the Metal-Oxide;

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CMOS Analog and Mixed-Signal Circuit Design

an introduction to the CMOS analog and mixed-signal circuit design with further coverage of basic devices, such as the Metal-Oxide;

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Spin Transfer Torque Based Devices, Circuits, and Memory

This first-of-its-kind resource is completely dedicated to spin transfer torque (STT) based devices, circuits, and memory. A wide range;

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Advances in Gan, GAAS, Sic and Related Alloys on Silicon Substrates

semiconductor materials system. Major efforts have, therefore, been made to combine the low cost and well established Si-based CMOS processing;

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Advances in Gan, GAAS, Sic and Related Alloys on Silicon Substrates

semiconductor materials system. Major efforts have, therefore, been made to combine the low cost and well established Si-based CMOS processing;

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CMOS Nanoelectronics

integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T;

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