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Gate Stack Engineering for Emerging Polarization based Non-volatile Memories

Gate Stack Engineering for Emerging Pola is een boek van Milan Pesic;

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Charge Trapping Non Volatile Memories

technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices;

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Advances in Non-volatile Memory and Storage Technology

emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on;

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Phase Change Memory

then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non;

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Sensing of Non-Volatile Memory Demystified

This book introduces readers to the latest advances in sensing technology for a broad range of non-volatile memories (NVMs). Challenges;

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CMOS Gate-Stack Scaling Materials, Interfaces and Reliability Implications

which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.;

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CMOS Gate-Stack Scaling Materials, Interfaces and Reliability Implications

which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.;

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Developments in Data Storage

of magnetic recording. It also serves as an invaluable reference for future storage technologies including non-volatile memories.;

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Silicon Non-Volatile Memories

requirements. Two main research paths are identified and discussed. Different evolutionary paths based on new materials and new transistor structures;

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Emerging Memory Technologies

attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design;

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Error Correction Codes for Non-Volatile Memories

of multimedia products, like USB keys, MP3 players, digital cameras and solid-state disk. In ECC for Non-Volatile Memories the authors expose the;

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Gate Stack and Silicide Issues in Silicon Processing

to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are;

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Polarization Engineering For Lcd Projection

of polarization, and how to manage its effects, is essential for the development of quality systems. Using the example of LCD projection technology, this;

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Ferroic Materials for Smart Systems: From Fundamentals to Device Applications

acoustic wave devices, microwave devices, magneto-electric devices, infrared detectors and memories. Ferroic Materials for Smart Systems;

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Algorithms and Architectures for Cryptography and Source Coding in Non-Volatile Flash Memories

-constrained embedded systems such as non-volatile flash memories. A new concept for elliptic curve cryptography is presented, which uses an arithmetic;

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Channel and Source Coding for Non-Volatile Flash Memories

schemes based on concatenated codes like generalized concatenated codes (GCC) which are applicable for NAND flash memories by using the hard and;

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Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing

Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo;

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Vectorial Optical Fields

engineered states of polarization. New effects and phenomena have been predicted and observed for light beams with these unconventional polarization;

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CMOS Nanoelectronics

topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the;

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Ionizing Radiation Effects in Electronics

Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for;

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Ionizing Radiation Effects in Electronics

: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are;

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Resistive Switching

This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types;

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Reliability of high-k / metal gate field-effect transistors considering circuit operational constraints

unintentional high gate leakage currents for gate oxide thicknesses below 2 nm. The introduction of high-k metal gate stacks guaranteed the trend;

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Food Processing

Advances in thermal and non-thermal food processing aims to discuss emerging trends based on the future scope and challenges and to explain;

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Materials and Physics for Nonvolatile Memories

This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and;

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MRS Proceedings Materials and Physics for Nonvolatile Memories

This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and;

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Volatile Biomarkers

. Volatile Biomarkers: Non-Invasive Diagnosis in Physiology and Medicine includes the latest discoveries and applications for VOCs from the world's;

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