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Doping in III-V Semiconductors

during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V;

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Quaternary Alloys Based on III-V Semiconductors

III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic;

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Quaternary Alloys Based on III-V Semiconductors

III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic;

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Cambridge Studies in Semiconductor Physics and Microelectronic Engineering

during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V;

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Optoelectronic Devices: III Nitrides

> The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high;

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Rare-earth Doping of Advanced Materials for Photonic Applications - 2011

Symposium V, 'Rare-Earth Doping of Advanced Materials for Photonic Applications', Spring Meeting, Materials Research Society, San Francisco;

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Atomic Diffusion in III-V Semiconductors

III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so;

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III-V Compound Semiconductors

many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors;

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III-V Compound Semiconductors

many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors;

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Single Crystals of Electronic Materials

. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III;

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Ternary Alloys Based on III-V Semiconductors

III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic;

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Multinary Alloys Based on III-V Semiconductors

III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic;

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Multinary Alloys Based on III-V Semiconductors

III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic;

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Properties of Group-IV, III-V and II-VI Semiconductors

Almost all the semiconductors of practical interest are the group-IV, III-V and II-VI semiconductors and the range of technical;

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Delta-doping of Semiconductors

, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor;

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Delta-doping of Semiconductors

, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor;

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Properties of III-V Quantum Wells and Superlattices

> Nanometric structures based on III-V semiconductors have attracted particular attention. Since 1970, around 15,000 papers have been published in all;

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Effective Electron Mass in Low-Dimensional Semiconductors

-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV;

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Silicon Photonics

on Si, Photonic crystal lasers and nanolasers on Si, the Evolution of monolithic quantum-dot light source for silicon photonics, III-V on Si;

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Molecular Beam Epitaxy

growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots;

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III-Nitride Semiconductors

The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications;

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Radiation Defect Engineering

technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional;

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Progress in Semiconductor Materials V

This book reviews the progress on interband and intersubband transitions in semiconductors, including III-V, IV and II-VI materials and;

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Quantum Effects, Heavy Doping, And The Effective Mass

nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium;

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Power Electronics Device Applications of Diamond Semiconductors

Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device;

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Devices for Integrated Circuits

A detailed, modern introduction to semiconductors made in silicon and III-V compounds. This book develops the device physics of pn;

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Materials for Photovoltaics

include: dye-sensitized solar cells; nanoparticle/hybrid solar cells; polymer-based devices; small molecule-based devices; III-V semiconductors;

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