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. Properties of III-V quantum wells and superlattices is intended both as a look-up source of evaluated data and as a finely;
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Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic;
Vergelijkbare producten zoals Fowler-Nordheim Field Emission
III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so;
Vergelijkbare producten zoals Atomic Diffusion in III-V Semiconductors
Superlattice to Nanoelectronics, Second Edition, traces the history of the development of superlattices and quantum wells from their;
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based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to;
Vergelijkbare producten zoals III-Nitride Semiconductors
applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which;
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-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The;
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propagation in anisotropic layered media and in inhomogeneous layers, guided waves, the coupling of modes, and the optical properties of superlattices;
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; defects in devices; interfaces, quantum wells and superlattices; and defect properties, reaction, activation and passivation.;
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. These investigations allow to understand the properties of III-nitride quantum dots, wires and wells grown on polar and nonpolar surfaces that;
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synthesized quantum structures. The growth of quantum wells and superlattices is well documents in this volume, as are the principal new superlattice;
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synthesized quantum structures. The growth of quantum wells and superlattices is well documents in this volume, as are the principal new superlattice;
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, who study the properties and applications of compound (III-V) semiconductor materials. Professor Manijeh Razeghi is director of the;
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examines MOCVD growth of various III-V heterojunctions and superlattices and discusses electronic and optoelectronic devices realized with this;
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examines MOCVD growth of various III-V heterojunctions and superlattices and discusses electronic and optoelectronic devices realized with this;
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in the field. Beginning with a review of the evolution of semiconductor superlattices and quantum nanostructures, the book explores fabrication;
Vergelijkbare producten zoals Physics and Applications of Semiconductor Quantum Structures
heterostructures and quantum wells have been developed. These heterostructures and quantum wells however suffer from limited quantum efficiency due;
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systems, including quantum wells, wires, dots and superlattices, as well as materials having exceptional conduction properties such as;
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; superlattices, quantum-confined Stark effect and Wannier-Stark ladder effects; resonant tunneling, quantum Hall effect, quantum wires and quantum;
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Properties of quantum-well(QW) structures have proved useful in providing enhanced device characteristics and even in generating new device;
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characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells;
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materials considered range from HD quantum confined nonlinear optical materials to HgTe/CdTe HD superlattices with graded interfaces and HD;
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properties of semiconductors and gradually evolves to cover quantum structures including single, multiple, and quantum wells and the properties;
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grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor;
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structures, inversion and accumu- tion layers, quantum well superlattices, carbon nanotubes, quantum wires, quantum wire superlattices, quantumdots;
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, quantum well and HEMT structures including wideband gap materials such as GaN and SiC in addition to IV and III-V semiconductors. The updated;
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This book discusses quantum optics and investigates the quantum properties of interactions between atoms and laser fields. It is divided;
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