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MRS Proceedings Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.;

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Materials and Devices for End-Of-Roadmap and Beyond CMOS Scaling

This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J;

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Nanoscale CMOS

modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap;

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Beyond CMOS Technologies for Next Generation Computer Design

This book describes the bottleneck faced soon by designers of traditional CMOS devices, due to device scaling, power and energy consumption;

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Electronic Device Architectures for the Nano-CMOS Era

the nano-CMOS era and beyond. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or;

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Emerging Nanoelectronic Devices

dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain;

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Integrated Nanodevice and Nanosystem Fabrication

devices with the silicon CMOS 2D- and 3D-based platforms. New fabrication techniques allowing strong energy and variability efficiency come in as;

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VLSI and Post-CMOS Electronics

of CMOS. Post-CMOS refers to the possible future digital logic technologies beyond the CMOS scaling limits. This book addresses the current state;

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Atomic-Scale Electronics Beyond CMOS

principles behind, and technological implementations for many devices that are now expected to become key elements of the future of nanoelectronics;

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Micro- and Nanoelectronics

contributions from experts in both industry and academia, this cutting-edge text: Discusses emerging silicon devices for CMOS technologies, fully;

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CMOS Gate-Stack Scaling Materials, Interfaces and Reliability Implications

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an;

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CMOS Gate-Stack Scaling Materials, Interfaces and Reliability Implications

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an;

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Advanced Nanoelectronics

An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will;

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MRS Proceedings Materials and Physics for Nonvolatile Memories

Symposium FF, Novel Materials and Devices for Spintronics, are also included.;

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Deep-submicron CMOS ICs

This book contains state-of-the-art material, but also focuses on aspects of scaling up to and beyond O.1 um CMOS technologies and designs.;

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Future Trends in Microelectronics

of their profession through questions such as: As the end of CMOS scaling is approaching, what kind of research does the silicon industry need to;

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MRS Proceedings Materials for Energy Storage, Generation and Transport

improved properties. This MRS volume, first published in 2002, focuses on materials issues in the low-scale generation, storage and transport;

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MRS Proceedings Doping Engineering for Front-End Processing

related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices;

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Resistive Switching

of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these;

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Random Telegraph Signals in Semiconductor Devices

semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices. It has become clear that the reliability;

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Energy Harvesting - Recent Advances in Materials, Devices and Applications

devices and systems. At the 2011 MRS Spring Meeting, in San Francisco, California, April 25-29, Symposium E, 'Energy Harvesting - Recent Advances;

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CMOS Past, Present and Future

CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization;

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Nano-Semiconductors

addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device;

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Scaling and Integration of High-Speed Electronics and Optomechanical Systems

technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche;

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Advances in Gan, GAAS, Sic and Related Alloys on Silicon Substrates

semiconductor materials system. Major efforts have, therefore, been made to combine the low cost and well established Si-based CMOS processing;

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Scaling Issues and Design of MEMS

of complex micro devices, and to encourage new thinking about scaling effects. It will provide support for practising engineers working within the;

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Transistor Scaling

For the past four decades, geometric scaling of silicon CMOS transistors has enabled not only an exponential increase in circuit;

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