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Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

lower the electrical resistivity of the silicon substrate as low as possible. Yet, during the growth of heavily n-type doped silicon by the;

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Handbook of Crystal Growth

of Czochralski and float zone growth of dislocation-free silicon Examines directional solidification of silicon ingots for photovoltaics;

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Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells

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Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells

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Advances in Materials Science Research

-physical and thermal properties; and the effect of hydrogen on boron doped amorphous silicon prepared by magnetron sputtering.;

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Ytterbium

characteristics and its abundance in some important geological materials. The authors explore structures formed by depositing submonolayer quantities;

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Plasticity of Crystals in a Microscopic Viewpoint on the Basis of Dislocation Motion

crystals at low temperatures. Topics discussed include process for thermal activated overcoming of the short-range obstacle by a dislocation;

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Screening effects in bipolaron theory and high temperature superconductivity

The subject of the present thesis is a study on bipolaron formation in heavily doped and polar materials. The study is applied to the;

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A Comprehensive Guide to Formaldehyde

future role in mitigating the chemical's harmful impact. Chapter 3 discusses the growth and development of doped nanostructure materials by using;

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Crystalline Silicon Solar Cells

removal, texturing, diffusion, and surface passivation. The electrical section focuses on formation of ohmic contacts on n and p-doped surfaces;

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Crystalline Silicon Solar Cells

removal, texturing, diffusion, and surface passivation. The electrical section focuses on formation of ohmic contacts on n and p-doped surfaces;

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Making Silicon Valley: Innovation and the Growth of High Tech, 1930-1970

University and other local institutions of higher learning. Lecuyer argues that Silicon Valley's emergence and its growth were made possible by the;

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Understanding Silicon Valley

, and entrepreneurial dynamics of Silicon Valley. Part I, History, provides context for the Valley's success by exploring its early;

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Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices

resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and;

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Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices

resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and;

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Magneto Thermoelectric Power In Heavily Doped Quantized Structures

This pioneering monograph solely deals with the Magneto Thermoelectric Power (MTP) in Heavily Doped (HD) Quantized Structures. The;

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Magnetic Convection

explains the details of liquid metal convection providing a guide for the elegant operation and control of Czochralski crystal growth, including;

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Neutron Transmutation Doping of Semiconductor Materials

papers on neutron damage and annealing. These papers indi- cate that irradiation technology for NTD silicon and its use by the power-device;

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Thin Films On Silicon: Electronic And Photonic Applications

silicon nitride and high-k, low-k, and electro-optically active oxides; and metals, in particular silicide alloys. The impact of film growth and;

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Interface properties of amorphous/crystalline silicon heterojunctions

surface fields (BSF) is limited by interface recombination. Alternatively the growth of intrinsicdoped amorphous silicon (a- Si: H) layer stacks;

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Porous Silicon

contributions from global experts. Each book contains extensive and in-depth sections that focus on the unique properties of porous silicon, its;

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Crystal Growth and Evaluation of Silicon for VLSI and ULSI

technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth;

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Crystal Growth and Evaluation of Silicon for VLSI and ULSI

technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth;

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Crystal Growth Processes Based on Capillarity

Crystal Growth Processes Based on Capillarity closely examines crystal growth technologies, like Czochralski, Floating zone, and Bridgman;

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Porous Silicon: From Formation to Application

, medicine, chemistry, biosensing, and energy. Porous Silicon: Formation and Properties fills a gap in the literature of the field today, providing a;

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Advances in Materials Science Research

some of its copolymers and composites. The quantitative study of the p-type doping of a-Si:H thin films carried out by combining in situ Kelvin;

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Solid State Nuclear Track Detectors and Their Applications

monitoring alongwith simulation of radiation damage, ion irradiation of materials and its characterizations by means of different techniques such as;

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